Nonlinear variations in the electronic structure of II-VI and III-V wurtzite semiconductors with biaxial strain

Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

  Yang, Shenyuan ^a   Prendergast, David ^a   Neaton, Jeffrey B ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND EDGE; BAND GAPS; BIAXIAL STRAINS; COMPRESSIVE STRAIN; ELECTRONIC BAND GAPS; FIRST-PRINCIPLES CALCULATION; HIGHLY NONLINEAR; III-V AND II-VI SEMICONDUCTORS; III-V NITRIDES; IN-BAND; MANY BODY PERTURBATION THEORY; NON-LINEAR VARIATION; STRAIN-INDUCED CHANGE; TENSILE BIAXIAL STRAIN; WURTZITES;

BOND LENGTH; CALCULATIONS; CHALCOGENIDES; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; NITRIDES; PERTURBATION TECHNIQUES; PHASE CHANGE MEMORY; ZINC SULFIDE;

STRAIN;

EID: 79954618068     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3578193     Document Type: Article

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