Growth, microstructure and morphology of epitaxial ScGaN films

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 33-40

  Knoll, S M ^a   Zhang, S ^a   Joyce, T B ^b   Kappers, M J ^a   Humphreys, C J ^a   Moram, M A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

molecular beam epitaxy; scandium gallium nitride; transmission electron microscopy; X ray diffraction

Indexed keywords

ATOMIC FORCE MICROSCOPY HEIGHT IMAGES; BASAL PLANE STACKING FAULTS; DISLOCATION DENSITIES; EFFUSION CELLS; FILM SURFACES; HIGH RESOLUTION X RAY DIFFRACTION; INCORPORATION RATES; LUMINESCENCE BAND; PRISMATIC STACKING FAULTS; SURFACTANT LAYERS; TRANSMISSION ELECTRON; WURTZITE STRUCTURE; X-RAY DIFFRACTOGRAMS;

ATOMIC FORCE MICROSCOPY; COALESCENCE; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; STACKING FAULTS; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC SULFIDE;

SCANDIUM;

EID: 84055212602     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201100158     Document Type: Article

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