-
2
-
-
0003809788
-
-
edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, Emis Datareviews Series No. 23 (Inspec, London)
-
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel, Emis Datareviews Series No. 23 (Inspec, London, 1999).
-
(1999)
Properties, Processing and Applications of Gallium Nitride and Related Semiconductors
-
-
-
6
-
-
0034894644
-
-
D. Gall, M. Stadele, K. Jarrendahl, I. Petrov, P. Desjardins, R.T. Haasch, T.-Y. Lee, and J.E. Greene, Phys. Rev. B 63, 125119 (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 125119
-
-
Gall, D.1
Stadele, M.2
Jarrendahl, K.3
Petrov, I.4
Desjardins, P.5
Haasch, R.T.6
Lee, T.-Y.7
Greene, J.E.8
-
7
-
-
0034906053
-
-
C. Stampfl, W. Mannstadt, R. Asahi, and A.J. Freeman, Phys. Rev. B 63, 155106 (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 155106
-
-
Stampfl, C.1
Mannstadt, W.2
Asahi, R.3
Freeman, A.J.4
-
8
-
-
84867331232
-
-
A. Neckel, P. Rast, R. Eibler, P. Weinberger, and K. Schwarz, J. Phys. C 9, 579 (1976).
-
(1976)
J. Phys. C
, vol.9
, pp. 579
-
-
Neckel, A.1
Rast, P.2
Eibler, R.3
Weinberger, P.4
Schwarz, K.5
-
10
-
-
0001256520
-
-
R. Monnier, J. Rhyner, T.M. Rice, and D.D. Koelling, Phys. Rev. B 31, 5554 (1985).
-
(1985)
Phys. Rev. B
, vol.31
, pp. 5554
-
-
Monnier, R.1
Rhyner, J.2
Rice, T.M.3
Koelling, D.D.4
-
13
-
-
0034895941
-
-
N. Ohba, K. Miwa, N. Nagasako, and A. Fukumoto, Phys. Rev. B 63, 115207 (2001).
-
(2001)
Phys. Rev. B
, vol.63
, pp. 115207
-
-
Ohba, N.1
Miwa, K.2
Nagasako, N.3
Fukumoto, A.4
-
14
-
-
10644250257
-
-
P. Hohenberg and W. Kohn, Phys. Rev. B 136, 864 (1964); W. Kohn and L.J. Sham, ibid. 140, A1133 (1965).
-
(1964)
Phys. Rev. B
, vol.136
, pp. 864
-
-
Hohenberg, P.1
Kohn, W.2
-
15
-
-
0042113153
-
-
P. Hohenberg and W. Kohn, Phys. Rev. B 136, 864 (1964); W. Kohn and L.J. Sham, ibid. 140, A1133 (1965).
-
(1965)
Phys. Rev. B
, vol.140
, pp. A1133
-
-
Kohn, W.1
Sham, L.J.2
-
21
-
-
84988764949
-
-
note
-
We also checked the stability of the h-ScN phase versus the basal strain, considered in Ref. 12, that allows a transitional path from h-ScN to the rocksalt phase of ScN. This path is found to have an energy barrier of 38 meV/ atoms.
-
-
-
-
22
-
-
0035474463
-
-
A. Al-Yacoub and L. Bellaiche, Appl. Phys. Lett. 79, 2166 (2001); A. Al-Yacoub, L. Bellaiche, and S.-H. Wei, Phys. Rev. Lett. 89, 057601 (2002).
-
(2001)
Appl. Phys. Lett.
, vol.79
, pp. 2166
-
-
Al-Yacoub, A.1
Bellaiche, L.2
-
23
-
-
0037194112
-
-
A. Al-Yacoub and L. Bellaiche, Appl. Phys. Lett. 79, 2166 (2001); A. Al-Yacoub, L. Bellaiche, and S.-H. Wei, Phys. Rev. Lett. 89, 057601 (2002).
-
(2002)
Phys. Rev. Lett.
, vol.89
, pp. 057601
-
-
Al-Yacoub, A.1
Bellaiche, L.2
Wei, S.-H.3
-
24
-
-
84988790996
-
-
note
-
A coordination number exactly equal to five requires that c/a = √4/3 and u = 0.50 in Eqs. (1) and (2).
-
-
-
-
27
-
-
84988790975
-
-
note
-
The direct band gap at F is ≃ 2.26 eV in h-ScN, according to our LDA calculations.
-
-
-
-
28
-
-
79956041003
-
-
J. Wu, W. Walukiewicz, K.M. Yu, J.W. Ager III, E.E. Haller, H. Lu, and W.J. Schaff, Appl. Phys. Lett. 80, 4741 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.80
, pp. 4741
-
-
Wu, J.1
Walukiewicz, W.2
Yu, K.M.3
Ager J.W. III4
Haller, E.E.5
Lu, H.6
Schaff, W.J.7
-
29
-
-
79955992797
-
-
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, Appl. Phys. Lett. 81, 1246 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 1246
-
-
Matsuoka, T.1
Okamoto, H.2
Nakao, M.3
Harima, H.4
Kurimoto, E.5
-
30
-
-
0001755832
-
-
We chose to calculate the energetics of the rocksalt and zincblende phases because most octet binary compounds are known to adopt either one of these two structures as ground state [see, for instance, A. Garcia and M.L. Cohen, Phys. Rev. B 47, 4215 (1993)].
-
(1993)
Phys. Rev. B
, vol.47
, pp. 4215
-
-
Garcia, A.1
Cohen, M.L.2
|