SCOPUS 정보 검색 플랫폼

Volumn 114, Issue 12, 2013, Pages

Hard x-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2

(10) Baba, Masakazu a Ito, Keita a Du, Weijie a Sanai, Tatsunori a Okamoto, Kazuaki b Toko, Kaoru a Ueda, Shigenori c Imai, Yoji d Kimura, Akio b Suemasu, Takashi a,e

a UNIVERSITY OF TSUKUBA (Japan)

b HIROSHIMA UNIVERSITY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

e JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CALCULATIONS; EPITAXIAL FILMS; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SILICON; SILICON COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

EFFECTIVE MASS; FIRST-PRINCIPLES CALCULATION; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; LOWER ENERGIES; N-TYPE CONDUCTIVITY; PHOTOELECTRON SPECTRUM; PSEUDOPOTENTIAL METHOD; SOLAR-CELL APPLICATIONS;

VALENCE BANDS;

EID: 84885407231 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4823784 Document Type: Article

Times cited : (17)

References (27)

1
- 33646079401
- 10.1016/j.tsf.2005.07.344
- K. Morita, Y. Inomata, and T. Suemasu, Thin Solid Films 508, 363 (2006). 10.1016/j.tsf.2005.07.344
- (2006) Thin Solid Films , vol.508 , pp. 363
- Morita, K.¹ Inomata, Y.² Suemasu, T.³

2
- 79959441764
- 10.1143/JJAP.50.068001
- K. Toh, T. Saito, and T. Suemasu, Jpn. J. Appl. Phys. 50, 068001 (2011). 10.1143/JJAP.50.068001
- (2011) Jpn. J. Appl. Phys. , vol.50 , pp. 068001
- Toh, K.¹ Saito, T.² Suemasu, T.³

3
- 34547341172
- 10.1002/pssb.200642556
- D. B. Migas, V. L. Shaposhnikov, and V. E. Borisenko, Phys. Status Solidi B 244, 2611 (2007). 10.1002/pssb.200642556
- (2007) Phys. Status Solidi B , vol.244 , pp. 2611
- Migas, D.B.¹ Shaposhnikov, V.L.² Borisenko, V.E.³

4
- 84859794946
- 10.1063/1.3703585
- W. Du, M. Suzuno, M. Ajmal Khan, K. Toh, N. Nakamura, M. Baba, K. Toko, N. Usami, and T. Suemasu, Appl. Phys. Lett. 100, 152114 (2012). 10.1063/1.3703585
- (2012) Appl. Phys. Lett. , vol.100 , pp. 152114
- Du, W.¹ Suzuno, M.² Ajmal Khan, M.³ Toh, K.⁴ Nakamura, N.⁵ Baba, M.⁶ Toko, K.⁷ Usami, N.⁸ Suemasu, T.⁹

5
- 84868368483
- 10.1063/1.4759246
- K. O. Hara, N. Usami, K. Toh, M. Baba, K. Toko, and T. Suemasu, J. Appl. Phys. 112, 083108 (2012). 10.1063/1.4759246
- (2012) J. Appl. Phys. , vol.112 , pp. 083108
- Hara, K.O.¹ Usami, N.² Toh, K.³ Baba, M.⁴ Toko, K.⁵ Suemasu, T.⁶

6
- 84859800185
- 10.1016/j.jcrysgro.2012.03.044
- M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K. Hara, N. Usami, and T. Suemasu, J. Cryst. Growth 348, 75 (2012). 10.1016/j.jcrysgro.2012.03.044
- (2012) J. Cryst. Growth , vol.348 , pp. 75
- Baba, M.¹ Toh, K.² Toko, K.³ Saito, N.⁴ Yoshizawa, N.⁵ Jiptner, K.⁶ Sekiguchi, T.⁷ Hara, K.⁸ Usami, N.⁹ Suemasu, T.¹⁰

7
- 57049116090
- 10.1143/APEX.1.051403
- M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu, Appl. Phys. Express 1, 051403 (2008). 10.1143/APEX.1.051403
- (2008) Appl. Phys. Express , vol.1 , pp. 051403
- Kobayashi, M.¹ Matsumoto, Y.² Ichikawa, Y.³ Tsukada, D.⁴ Suemasu, T.⁵

8
- 84875696120
- 10.1063/1.4796142
- M. Ajmal Khan, K. O. Hara, W. Du, M. Baba, K. Nakamura, M. Suzuno, K. Toko, N. Usami, and T. Suemasu, Appl. Phys. Lett. 102, 112107 (2013). 10.1063/1.4796142
- (2013) Appl. Phys. Lett. , vol.102 , pp. 112107
- Ajmal Khan, M.¹ Hara, K.O.² Du, W.³ Baba, M.⁴ Nakamura, K.⁵ Suzuno, M.⁶ Toko, K.⁷ Usami, N.⁸ Suemasu, T.⁹

9
- 84873675331
- 10.1063/1.4790597
- K. Nakamura, M. Baba, M. Ajmal Khan, W. Du, M. Sasase, K. O. Hara, U. Usami, K. Toko, and T. Suemasu, J. Appl. Phys. 113, 053511 (2013). 10.1063/1.4790597
- (2013) J. Appl. Phys. , vol.113 , pp. 053511
- Nakamura, K.¹ Baba, M.² Ajmal Khan, M.³ Du, W.⁴ Sasase, M.⁵ Hara, K.O.⁶ Usami, U.⁷ Toko, K.⁸ Suemasu, T.⁹

10
- 84980189761
- 10.1002/anie.197706591
- J. Evers, G. Oehlinger, and A. Weiss, Angew. Chem., Int. Ed. 16, 659 (1977). 10.1002/anie.197706591
- (1977) Angew. Chem., Int. Ed. , vol.16 , pp. 659
- Evers, J.¹ Oehlinger, G.² Weiss, A.³

11
- 0038556591
- 10.1016/0925-8388(95)01530-2
- M. Imai and T. Hirano, J. Alloys Compd. 224, 111 (1995). 10.1016/0925-8388(95)01530-2
- (1995) J. Alloys Compd. , vol.224 , pp. 111
- Imai, M.¹ Hirano, T.²

12
- 0036533309
- 10.1016/S0966-9795(02)00003-1
- Y. Imai and A. Watanabe, Intermetallics 10, 333 (2002). 10.1016/S0966-9795(02)00003-1
- (2002) Intermetallics , vol.10 , pp. 333
- Imai, Y.¹ Watanabe, A.²

13
- 0042443413
- 10.1016/S0925-8388(03)00037-9
- Y. Imai, A. Watanabe, and M. Mukaida, J. Alloys Compd. 358, 257 (2003). 10.1016/S0925-8388(03)00037-9
- (2003) J. Alloys Compd. , vol.358 , pp. 257
- Imai, Y.¹ Watanabe, A.² Mukaida, M.³

14
- 33845691593
- 10.1016/j.jallcom.2006.03.074
- S. Kishino, T. Imai, T. Iida, Y. Nakaishi, M. Shinada, Y. Takanashi, and N. Hamada, J. Alloys Compd. 428, 22 (2007). 10.1016/j.jallcom.2006.03.074
- (2007) J. Alloys Compd. , vol.428 , pp. 22
- Kishino, S.¹ Imai, T.² Iida, T.³ Nakaishi, Y.⁴ Shinada, M.⁵ Takanashi, Y.⁶ Hamada, N.⁷

15
- 77955805561
- 10.1002/pssc.200983596
- M. Sumiya, M. Lozach, N. Matsuki, S. Ito, N. Ohhashi, K. Sakoda, H. Yoshikawa, S. Ueda, and K. Kobayashi, Phys. Status Solidi C 7, 1903 (2010). 10.1002/pssc.200983596
- (2010) Phys. Status Solidi C , vol.7 , pp. 1903
- Sumiya, M.¹ Lozach, M.² Matsuki, N.³ Ito, S.⁴ Ohhashi, N.⁵ Sakoda, K.⁶ Yoshikawa, H.⁷ Ueda, S.⁸ Kobayashi, K.⁹

16
- 0003139802
- 10.1006/adnd.2000.0849
- M. B. Trzhaskovskaya, V. I. Nefedov, and V. G. Yarzhemsky, At. Data Nucl. Data Tables 77, 97 (2001). 10.1006/adnd.2000.0849
- (2001) At. Data Nucl. Data Tables , vol.77 , pp. 97
- Trzhaskovskaya, M.B.¹ Nefedov, V.I.² Yarzhemsky, V.G.³

17
- 0036872984
- 10.1006/adnd.2002.0886
- M. B. Trzhaskovskaya, V. I. Nefedov, and V. G. Yarzhemsky, At. Data Nucl. Data Tables 82, 257 (2002). 10.1006/adnd.2002.0886
- (2002) At. Data Nucl. Data Tables , vol.82 , pp. 257
- Trzhaskovskaya, M.B.¹ Nefedov, V.I.² Yarzhemsky, V.G.³

18
- 77955074886
- 10.1063/1.3463225
- S. Ueda, Y. Katsuya, M. Tanaka, H. Yoshikawa, Y. Yamashita, S. Ishimaru, Y. Matsushita, and K. Kobayashi, AIP Conf. Proc. 1234, 403 (2010). 10.1063/1.3463225
- (2010) AIP Conf. Proc. , vol.1234 , pp. 403
- Ueda, S.¹ Katsuya, Y.² Tanaka, M.³ Yoshikawa, H.⁴ Yamashita, Y.⁵ Ishimaru, S.⁶ Matsushita, Y.⁷ Kobayashi, K.⁸

19
- 4644297814
- 10.1143/JJAP.43.4155
- Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa, Jpn. J. Appl. Phys., Part 1 43, 4155 (2004). 10.1143/JJAP.43.4155
- (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 4155
- Inomata, Y.¹ Nakamura, T.² Suemasu, T.³ Hasegawa, F.⁴

20
- 2942592701
- 10.1143/JJAP.43.L478
- Y. Inomata, T. Nakamura, T. Suemasu, and F. Hasegawa, Jpn. J. Appl. Phys., Part 2 43, L478 (2004). 10.1143/JJAP.43.L478
- (2004) Jpn. J. Appl. Phys., Part 2 , vol.43 , pp. 478
- Inomata, Y.¹ Nakamura, T.² Suemasu, T.³ Hasegawa, F.⁴

21
- 84885396110
- private communication.
- D. B. Migas, private communication (2013).
- (2013)
- Migas, D.B.¹

22
- 0001559783
- 10.1103/PhysRevB.5.662
- G. W. Rubloff, Phys. Rev. B 5, 662 (1972). 10.1103/PhysRevB.5.662
- (1972) Phys. Rev. B , vol.5 , pp. 662
- Rubloff, G.W.¹

23
- 0004005306
- 2nd ed. (Wiley, New York)
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 850.
- (1981) Physics of Semiconductor Devices , pp. 850
- Sze, S.M.¹

24
- 33745307567
- 10.1143/JJAP.45.L519
- T. Suemasu, K. Morita, M. Kobayashi, M. Saida, and M. Sasaki, Jpn. J. Appl. Phys., Part 2 45, L519 (2006). 10.1143/JJAP.45.L519
- (2006) Jpn. J. Appl. Phys., Part 2 , vol.45 , pp. 519
- Suemasu, T.¹ Morita, K.² Kobayashi, M.³ Saida, M.⁴ Sasaki, M.⁵

25
- 36449009524
- 10.1063/1.114595
- A. Izumi, Y. Hirai, K. Tsutsui, and N. S. Sokolov, Appl. Phys. Lett. 67, 2792 (1995). 10.1063/1.114595
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2792
- Izumi, A.¹ Hirai, Y.² Tsutsui, K.³ Sokolov, N.S.⁴

26
- 0030173793
- 10.1016/0039-6028(96)00200-2
- H. Kobayashi, K. Namba, Y. Yamashita, Y. Nakato, and Y. Nishioka, Surf. Sci. 357-358, 455 (1996). 10.1016/0039-6028(96)00200-2
- (1996) Surf. Sci. , vol.357-358 , pp. 455
- Kobayashi, H.¹ Namba, K.² Yamashita, Y.³ Nakato, Y.⁴ Nishioka, Y.⁵

27
- 79951491454
- 10.1002/sia.3522
- S. Tanuma, C. J. Powell, and D. R. Penn, Surf. Interface Anal. 43, 689 (2011). 10.1002/sia.3522
- (2011) Surf. Interface Anal. , vol.43 , pp. 689
- Tanuma, S.¹ Powell, C.J.² Penn, D.R.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.