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Volumn 112, Issue 8, 2012, Pages
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Investigation of the recombination mechanism of excess carriers in undoped BaSi 2 films on silicon
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Author keywords
[No Author keywords available]
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Indexed keywords
AUGER RECOMBINATION;
CARRIER TRAPPING;
DECAY MODE;
DECAY RATE;
EFFECTIVE LIFETIME;
EXCESS CARRIERS;
EXCITATION LASERS;
N TYPE SILICON;
PHOTOCONDUCTIVITY DECAY;
RECOMBINATION CENTERS;
RECOMBINATION MECHANISMS;
SHOCKLEY-READ-HALL RECOMBINATIONS;
TIME CONSTANTS;
X RAY ROCKING CURVE;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
LASER EXCITATION;
MOLECULAR BEAM EPITAXY;
DECAY (ORGANIC);
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EID: 84868368483
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.4759246 Document Type: Article |
Times cited : (83)
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References (21)
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