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Volumn 112, Issue 8, 2012, Pages

Investigation of the recombination mechanism of excess carriers in undoped BaSi 2 films on silicon

Author keywords

[No Author keywords available]

Indexed keywords

AUGER RECOMBINATION; CARRIER TRAPPING; DECAY MODE; DECAY RATE; EFFECTIVE LIFETIME; EXCESS CARRIERS; EXCITATION LASERS; N TYPE SILICON; PHOTOCONDUCTIVITY DECAY; RECOMBINATION CENTERS; RECOMBINATION MECHANISMS; SHOCKLEY-READ-HALL RECOMBINATIONS; TIME CONSTANTS; X RAY ROCKING CURVE;

EID: 84868368483     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759246     Document Type: Article
Times cited : (83)

References (21)
  • 11
    • 0001377590 scopus 로고
    • 10.1016/0038-1101(67)90122-0
    • H. D. Barber, Solid-State Electron. 10, 1039 (1967). 10.1016/0038- 1101(67)90122-0
    • (1967) Solid-State Electron. , vol.10 , pp. 1039
    • Barber, H.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.