In-situ heavily p-type doping of over 1020 cm-3 in semiconducting BaSi2 thin films for solar cells applications

Applied Physics Letters

Volumn 102, Issue 11, 2013, Pages

  Ajmal Khan, M ^a   Hara, K O ^b   Du, W ^a   Baba, M ^a   Nakamura, K ^a   Suzuno, M ^a   Toko, K ^a   Usami, N ^b,c   Suemasu, T ^a,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; ACTIVATION EFFICIENCY; DOPANT ACTIVATION; KNUDSEN CELL; LAYER GROWTH; P-TYPE DOPING; RAPID THERMAL ANNEALING (RTA); ROOM TEMPERATURE;

DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING;

HOLE CONCENTRATION;

EID: 84875696120     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4796142     Document Type: Article

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