Electronic and optical properties of bulk crystals of semiconducting orthorhombic BaSi2 prepared by the vertical Bridgman method

Journal of Alloys and Compounds

Volumn 428, Issue 1-2, 2007, Pages 22-27

  Kishino, Shingo ^a   Imai, Tomohiro ^a   Iida, Tsutomu ^a   Nakaishi, Yoshiaki ^a   Shinada, Masato ^a   Takanashi, Yoshifumi ^a   Hamada, Noriaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

BaSi2; Crystal growth; Local density approximation; Semiconductor; Silicide

Indexed keywords

CRYSTAL GROWTH; ELECTRIC PROPERTIES; MIXTURES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; X RAY DIFFRACTION ANALYSIS;

BRIDGMAN GROWTH METHOD; BULK CRYSTALS; LOCAL DENSITY APPROXIMATION; SILICIDES; STOICHIOMETRIC MELTS;

BARIUM ALLOYS;

EID: 33845691593     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2006.03.074     Document Type: Article

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