Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 7-8, 2010, Pages 1903-1905

  Sumiya, M ^a   Lozach, M ^b   Matsuki, N ^a   Ito, S ^a   Ohhashi, N ^a   Sakoda, K ^a   Yoshikawa, H ^a   Ueda, S ^a   Kobayashi, K ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Band structure; Doping; GaN; MOVPE; Photoelectron spectroscopy

Indexed keywords

ANGULAR DEPENDENCE; BUILT-IN POTENTIAL; CORE LEVELS; DOPING; GAN; GAN FILM; GAN: MG; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; III-V NITRIDES; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOVPE; NON-DOPED; SCHOTTKY CONTACTS; SI FILMS; SURFACE BAND BENDING; VALENCE-BAND MAXIMUMS;

ELECTRONS; FERMI LEVEL; GALLIUM ALLOYS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOELECTRICITY; PHOTONS; SEMICONDUCTOR DOPING; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BANDS;

EID: 77955805561     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983596     Document Type: Conference Paper

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