Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 50, Issue 6 PART 1, 2011, Pages

  Toh, Katsuaki ^a   Saito, Takanobu ^a   Suemasu, Takashi ^a,b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FUSED SILICA SUBSTRATES; LARGE ABSORPTION COEFFICIENT; OPTICAL ABSORPTION EDGE; OPTICAL ABSORPTION MEASUREMENT; OPTICAL ABSORPTION PROPERTIES; ROOM TEMPERATURE; SI LAYER; SILICON-ON-INSULATOR SUBSTRATES; SOI SUBSTRATES; TRANSMISSION CONFIGURATION;

ABSORPTION; ABSORPTION SPECTROSCOPY; DIFFRACTION; EPITAXIAL FILMS; EPITAXIAL GROWTH; FUSED SILICA; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; X RAY DIFFRACTION;

SUBSTRATES;

EID: 79959441764     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.068001     Document Type: Article

References (15)

1. D. Tsukada et al.: Appl. Phys. Express 2 (2009) 051601.
2. Y. Matsumoto et al.: Appl. Phys. Express 2 (2009) 021101.
3. T. Saito et al.: Appl. Phys. Express 3 (2010) 021301.
4. Y. Imai and A. Watanabe: Intermetallics 10 (2002) 333.
5. L. I. Ivanenko et al.: Thin Solid Films 461 (2004) 141.
6. D. B. Migas et al.: Phys. Status Solidi B 244 (2007) 2611.
7. Y. Inomata et al.: Jpn. J. Appl. Phys. 43 (2004) 4155.
8. Y. Inomata et al.: Jpn. J. Appl. Phys. 43 (2004) L478.
9. Y. Inomata et al.: Jpn. J. Appl. Phys. 43 (2004) L771.
10. K. Morita et al.: Thin Solid Films 508 (2006) 363.
11. T. Nakamura et al.: Appl. Phys. Lett. 81 (2002) 1032.
12. S. Kishino et al.: J. Alloys Compd. 428 (2007) 22.
13. M. Imai et al.: Intermetallics 18 (2010) 548.
14. R. Swanepoel: J. Phys. E 16 (1983) 1214.
15. T. Suemasu et al.: J. Cryst. Growth 301-302 (2007) 680.