Investigation of grain boundaries in BaSi 2 epitaxial films on Si(1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique

Journal of Crystal Growth

Volumn 348, Issue 1, 2012, Pages 75-79

  Baba, Masakazu ^a   Toh, Katsuaki ^a   Toko, Kaoru ^a   Saito, Noriyuki ^b   Yoshizawa, Noriko ^b   Jiptner, Karolin ^c   Sekiguchi, Takashi ^c   Hara, Kosuke O ^d   Usami, Noritaka ^d,e   Suemasu, Takashi ^a,e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d TOHOKU UNIVERSITY   (Japan)

^e JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B2. Semiconductor silicon compounds

Indexed keywords

CRYSTALLINE QUALITY; DARK-FIELD; DIFFUSION LENGTH; ELECTRON-BEAM-INDUCED CURRENT TECHNIQUES; GRAIN SIZE; MINORITY CARRIER; SEMICONDUCTOR SILICON COMPOUNDS; SI (1 1 1); SI(111) SUBSTRATE; TEM IMAGES; TRANSMISSION ELECTRON MICROSCOPY TEM; TWO BEAMS;

EPITAXIAL FILMS; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84859800185     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.03.044     Document Type: Article

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