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Journal of Applied Physics

Volumn 113, Issue 5, 2013, Pages

Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111)

(9) Nakamura, K a Baba, M a Ajmal Khan, M a Du, W a Sasase, M b Hara, K O c Usami, N c,d Toko, K a Suemasu, T a,d

a UNIVERSITY OF TSUKUBA (Japan)

b WAKASA WAN ENERGY RESEARCH CENTER (Japan)

c TOHOKU UNIVERSITY (Japan)

d JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON ATOM; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEPTH PROFILE; GRAIN SIZE; GRAIN-BOUNDARY DIFFUSION; SAMPLE SURFACE; SI (1 1 1); SIMS PROFILE; TEM IMAGES; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; BORON; DIFFUSION; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

EPITAXIAL FILMS;

EID: 84873675331 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4790597 Document Type: Article

Times cited : (21)

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