Control of electron and hole concentrations in semiconducting silicide BaSi2 with impurities grown by molecular beam epitaxy

Applied Physics Express

Volumn 1, Issue 5, 2008, Pages 0514031-0514034

  Kobayashi, Michitaka ^a   Matsumoto, Yuta ^a   Ichikawa, Yoshitake ^a   Tsukada, Dai ^a   Suemasu, Takashi ^b  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRONS; HOLE CONCENTRATION; INDIUM; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES; SILICIDES; SILICON;

DOPING ATOMS; ELECTRON CONCENTRATIONS; HOLE DENSITIES; KNUDSEN CELLS; ROOM TEMPERATURES; SEMICONDUCTING SILICIDES; SI(111) SUBSTRATES; SUBSTRATE TEMPERATURES;

SUBSTRATES;

EID: 57049116090     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.051403     Document Type: Article

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