Charge trapping states at the SiO2-oligothiophene monolayer interface in field effect transistors studied by kelvin probe force microscopy

ACS Nano

Volumn 7, Issue 9, 2013, Pages 8258-8265

  Zhang, Yingjie ^a,b   Ziegler, Dominik ^a   Salmeron, Miquel ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

charge trapping; density of states; field effect transistor; Kelvin probe force microscopy; oligothiophene monolayer

Indexed keywords

CHARGE CARRIER INJECTION; DENSITY OF STATE; DIELECTRIC SURFACE; HYDROPHILIC SURFACES; KELVIN PROBE FORCE MICROSCOPY; OLIGOTHIOPHENES; POTENTIAL TRANSIENT MEASUREMENT; SURFACE PASSIVATION;

CHARGE TRAPPING; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; MONOLAYERS; PROBES; SURFACE POTENTIAL; TRANSIENTS;

INTERFACE STATES;

EID: 84884938885     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403750h     Document Type: Article

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