Accurate description of charge transport in organic field effect transistors using an experimentally extracted density of states

Physical Review B - Condensed Matter and Materials Physics

Volumn 85, Issue 8, 2012, Pages

  Roelofs, W S C ^a,b   Mathijssen, S G J ^b   Janssen, R A J ^a   De Leeuw, D M ^b,c   Kemerink, M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c UNIVERSITY OF GRONINGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84857727019     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.85.085202     Document Type: Article

References (22)

1. G. Horowitz and P. Delannoy, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.350250 70, 469 (1991).
2. R. Coehoorn, W. F. Pasveer, P. A. Bobbert, and M. A. J. Michels, Phys. Rev. B 1098-0121 10.1103/PhysRevB.72.155206 72, 155206 (2005). (Pubitemid 43024156)
3. D. Oberhoff, K. P. Pernstich, D. J. Gundlach, and B. Batlogg, IEEE Trans. Electron Devices IETDAI 0018-9383 10.1109/TED.2006.887200 54, 17 (2007). (Pubitemid 46056038)
4. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.57.12964 57, 12964 (1998).
5. N. Tessler, Y. Preezant, N. Rappaport, and Y. Roichman, Adv. Mater. ADVMEW 0935-9648 10.1002/adma.200803541 21, 2741 (2009).
6. J. Puigdollers, A. Marsal, S. Cheylan, C. Voz, and R. Alcubilla, Org. Electron. 1566-1199 10.1016/j.orgel.2010.05.007 11, 1333 (2010).
7. W. L. Kalb, S. Haas, C. Krellner, T. Mathis, and B. Batlogg, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.81.155315 81, 155315 (2010).
8. K. Celebi, P. J. Jadhav, K. M. Milaninia, M. Bora, and M. A. Baldo, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2976634 93, 083308 (2008).
9. S. Yogev, E. Halpern, R. Matsubara, M. Nakamura, and Y. Rosenwaks, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.84.165124 84, 165124 (2011).
10. W. Y. So, D. V. Lang, V. Y. Butko, X. L. Chi, J. C. Lashley, and A. P. Ramirez, J. Appl. Phys. 0021-8979 10.1063/1.2975973 104, 054512 (2008).
11. O. Tal, Y. Rosenwaks, Y. Preezant, N. Tessler, C. K. Chan, and A. Kahn, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.95.256405 95, 256405 (2005). (Pubitemid 41816009)
12. I. N. Hulea, H. B. Brom, A. J. Houtepen, D. van Maekelbergh, J. J. Kelly, and E. A. Meulenkamp, Phys. Rev. Lett. 10.1103/PhysRevLett.93.166601 93, 166601 (2004).
13. S. G. J. Mathijssen, E. C. P. Smits, P. A. van Hal, H. J. Wondergem, S. A. Ponomarenko, A. Moser, R. Resel, P. A. Bobbert, M. Kemerink, R. A. J. Janssen, and D. M. de Leeuw, Nat. Nanotechnol. 1748-3387 10.1038/nnano.2009.201 4, 674 (2009).
14. Gauss.
15. I. Lange, J. C. Blakesley, J. Frisch, A. Vollmer, N. Koch, and D. Neher, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.106.216402 106, 216402 (2011).
16. E. C. P. Smits, S. G. J. Mathijssen, P. A. van Hal, S. Setayesh, T. C. T. Geuns, K. A. H. A. Mutsaers, E. Cantatore, H. J. Wondergem, O. Werzer, R. Resel, M. Kemerink, S. Kirchmeyer, A. M. Muzafarov, S. A. Ponomarenko, B. de Boer, P. W. M. Blom, and D. M. de Leeuw, Nature 10.1038/nature07320 455, 956 (2008).
17. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.086802 93, 086802 (2004).
18. M. Kemerink, T. Hallam, M. J. Lee, N. Zhao, M. Caironi, and H. Sirringhaus, Phys. Rev. B 1098-0121 10.1103/PhysRevB.80.115325 80, 115325 (2009).
19. C. Tanase, E. J. Meijer, P. W. M. Blom, and D. M. de Leeuw, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.91.216601 91, 21660 (2003).
20. H. C. F. Martens, I. N. Hulea, I. Romijn, H. B. Brom, W. F. Pasveer, and M. A. J. Michels, Phys. Rev. B PLRBAQ 0556-2805 10.1103/PhysRevB.67.121203 67, 121203 (2003).
21. A. L. Efros and B. I. Shklovskii, Electronic Properties of Doped Semiconductors (Springer-Verlag, Berlin, 1984).
22. A. Miller and E. Abrahams, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.120.745 120, 745 (1960).