Effects of hole and electron trapping on organic field-effect transistor transfer characteristic

Synthetic Metals

Volumn 161, Issue 9-10, 2011, Pages 789-793

  Bolsée, Jean Christophe ^a   Manca, Jean ^a  

^a HASSELT UNIVERSITY   (Belgium)

Author keywords

Electron trapping; Hole trapping; Organic transistor; Transfer characteristic

Indexed keywords

APPARENT MOBILITY; DE-TRAPPING; DETRAPPING RATE; ELECTRON TRAPPING; GATE VOLTAGES; HOLE TRAPPING; ONSET VOLTAGES; ORGANIC TRANSISTOR; SWEEP RATES; TRANSFER CHARACTERISTICS; TRAPPED ELECTRONS;

ELECTRON TRAPS; ELECTRONS; FIELD EFFECT TRANSISTORS; HOLE CONCENTRATION; HOLE TRAPS; HYSTERESIS; TRANSCONDUCTANCE;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 79955716213     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.01.031     Document Type: Article

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