Electrical transport properties of oligothiophene-based molecular films studied by current sensing atomic force microscopy

Nano Letters

Volumn 11, Issue 10, 2011, Pages 4107-4112

  Hendriksen, Bas L M ^a,e   Martin, Florent ^a,b   Qi, Yabing ^a,f   Mauldin, Clayton ^b   Vukmirovic, Nenad ^a,g   Ren, Junfeng ^a,c   Wormeester, Herbert ^d   Katan, Allard J ^a   Altoe, Virginia ^a   Aloni, Shaul ^a   Fréchet, Jean M J ^b   Wang, Lin Wang ^a   Salmeron, Miquel ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c SHANDONG NORMAL UNIVERSITY   (China)

^d UNIVERSITY OF TWENTE   (Netherlands)

^e RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^f Princeton University   (United States)

^g UNIVERSITY OF BELGRADE   (Serbia)

Author keywords

conduction anisotropy; current sensing atomic force microscopy; Langmuir Blodgett monolayer; lateral transport; molecular electronics; Oligothiophene

Indexed keywords

CONDUCTING PROBE ATOMIC FORCE MICROSCOPIES; CURRENT IMAGING; CURRENT SENSING ATOMIC FORCE MICROSCOPIES; CURRENT SENSING ATOMIC FORCE MICROSCOPY; CURRENT VOLTAGE; ELECTRICAL CONDUCTION; ELECTRICAL TRANSPORT PROPERTIES; HIGHEST OCCUPIED MOLECULAR ORBITAL; LANGMUIR-BLODGETT MONOLAYER; LATERAL TRANSPORT; MOLECULAR FILMS; MOLECULAR LATTICE; MONOLAYER FILM; OLIGOTHIOPHENES; PENTATHIOPHENE; VIA HOLE;

ANISOTROPY; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; CHEMICAL BONDS; CONDUCTIVE FILMS; MOLECULAR ELECTRONICS; MOLECULAR ORBITALS; MONOLAYERS; SILICON COMPOUNDS; TRANSPORT PROPERTIES;

ELECTRIC PROPERTIES;

EID: 80054020808     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202720y     Document Type: Article

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