Investigation of electron trapping behavior in n-channel organic thin-film transistors with ultrathin polymer passivation on SiO2 gate insulator

Synthetic Metals

Volumn 160, Issue 13-14, 2010, Pages 1574-1578

  Tanida, Shinji ^a   Noda, Kei ^a   Kawabata, Hiroshi ^b   Matsushige, Kazumi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Air stability; Electron trap; Gate passivation layer; n Channel operation; Organic thin film transistor

Indexed keywords

AIR STABILITY; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE CURVE; EFFECTIVE ELECTRON MOBILITY; ELECTRON TRAPPING; GATE INSULATOR; INTERFACE TRAPS; MULTIPLE TRAPS; N-CHANNEL; ORGANIC THIN FILM TRANSISTORS; PASSIVATION LAYER; PERYLENE TETRACARBOXYLIC DIIMIDE; SPIN-COATING PROCESS; ULTRA-THIN; ULTRATHIN POLYMERS;

CAPACITANCE; CHEMICAL SENSORS; COATINGS; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; ESTERS; PASSIVATION; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS;

THIN FILM TRANSISTORS;

EID: 77953869648     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2010.05.027     Document Type: Article

References (18)

1. Zaumseil J., and Sirringhaus H. Chem. Rev. 107 (2007) 1296
2. Chen F.-C., and Liao C.-H. Appl. Phys. Lett. 93 (2008) 103310
3. Kumaki D., Umeda T., and Tokito S. Appl. Phys. Lett. 92 (2008) 093309
4. Chua L.-L., Zaumseil J., Chang J.-F., Ou E.C.-W., Ho P.K.-H., Sirringhaus H., and Friend R.H. Nature 434 (2005) 194
5. Singh Th.B., Meghdadi F., Günes S., Marjanonic N., Horowitz G., Lang P., Bauer S., and Sariciftci N.S. Adv. Mater. 17 (2005) 2315
6. Sakanoue T., Yahiro M., Adachi C., Takimiya K., and Toshimitsu A. J. Appl. Phys. 103 (2008) 094509
7. Tanida S., Noda K., Kawabata H., and Matsushige K. Thin Solid Films 518 (2009) 571
8. Tanida S., Noda K., Kawabata H., and Matsushige K. Polym. Adv. Technol. (2009) 10.1002/pat.1474
9. Noda K., Tanida S., Kawabata H., and Matsushige K. Synth. Met. 160 (2010) 83
10. Tatemichi S., Ichikawa M., Koyama T., and Taniguchi Y. Appl. Phys. Lett. 89 (2006) 112108
11. Ohta N., Koizumi M., Nishimura Y., Yamazaki I., Tanimoto Y., Hatano Y., Yamamoto M., and Kono H. J. Phys. Chem. 100 (1996) 19295
12. Parratt L.G. Phys. Rev. 95 (1954) 359
13. Puigdollers J., Voz C., Orpella A., Quidant R., Martin I., Vetter M., and Alcubilla R. Org. Electron. 5 (2004) 67
14. Kobayashi S., Nishikawa T., Takenobu T., Mori S., Shimoda T., Mitani T., Shimotani H., Yoshimoto N., Ogawa S., and Iwasa Y. Nat. Mater. 3 (2004) 317
15. Halik M., Klauk H., Zschieschang U., Schmid G., Dehm C., Schütz M., Maisch S., Effenberger F., Brunnbauer M., and Stellacci F. Nature 431 (2004) 963
16. Berglund C.N. IEEE Trans. Electron Dev. 13 (1966) 701
17. Kawasaki N., Ohta Y., Kubozono Y., Konishi A., and Fujiwara A. Appl. Phys. Lett. 92 (2008) 163307
18. Chesterfield R.J., McKeen J.C., Newman C.R., Ewbank P.C., da Silva Filho D.A., Brédas J.-L., Miller L.L., Mann K.R., and Frisbie C.D. J. Phys. Chem. B 108 (2004) 19281