-
1
-
-
84884176284
-
-
SETIS 2013 Solar Photovoltaic Report http://setis.ec.europa.eu/ technologies/Solar-photovoltaic/info
-
(2013)
Solar Photovoltaic Report
-
-
-
3
-
-
84871540902
-
Atomistic simulation of doping effects on growth and charge transport in Si/Ag interfaces in high-performance solar cells
-
10.1103/PhysRevB.86.245319 1098-0121 B 245319
-
Butler K T and Harding J H 2012 Atomistic simulation of doping effects on growth and charge transport in Si/Ag interfaces in high-performance solar cells Phys. Rev. B 86 245319
-
(2012)
Phys. Rev.
, vol.86
, Issue.24
-
-
Butler, K.T.1
Harding, J.H.2
-
4
-
-
79961178004
-
Structural and electronic properties of silver/silicon interfaces and implications for solar cell performance
-
10.1103/PhysRevB.83.235307 1098-0121 B 235307
-
Butler K T, Vullum P E, Muggerud A M, Cabrera E and Harding J H 2011 Structural and electronic properties of silver/silicon interfaces and implications for solar cell performance Phys. Rev. B 83 235307
-
(2011)
Phys. Rev.
, vol.83
, Issue.23
-
-
Butler, K.T.1
Vullum, P.E.2
Muggerud, A.M.3
Cabrera, E.4
Harding, J.H.5
-
5
-
-
0003368865
-
Diffusion layers and the Schottky-barrier height in nickel silicide-silicon interfaces
-
10.1103/PhysRevB.28.5766 0163-1829 B
-
Chang Y-J and Erskine J L 1983 Diffusion layers and the Schottky-barrier height in nickel silicide-silicon interfaces Phys. Rev. B 28 5766-73
-
(1983)
Phys. Rev.
, vol.28
, Issue.10
, pp. 5766-5773
-
-
Chang, Y.-J.1
Erskine, J.L.2
-
6
-
-
33645521777
-
Fermi-level depinning for low-barrier Schottky source/drain transistors
-
10.1063/1.2159096 0003-6951 012105
-
Connelly D, Faulkner C, Clifton P A and Grupp D E 2006 Fermi-level depinning for low-barrier Schottky source/drain transistors Appl. Phys. Lett. 88 012105
-
(2006)
Appl. Phys. Lett.
, vol.88
, Issue.1
-
-
Connelly, D.1
Faulkner, C.2
Clifton, P.A.3
Grupp, D.E.4
-
8
-
-
10644251819
-
Optimizing the formation of nickel silicide
-
10.1016/j.mseb.2004.07.033 0921-5107 B
-
Foggiato J, Yoo W S, Ouaknine M, Murakami T and Fukada T 2004 Optimizing the formation of nickel silicide Mater. Sci. Eng. B 114/115 56-60
-
(2004)
Mater. Sci. Eng.
, vol.114-115
, pp. 56-60
-
-
Foggiato, J.1
Yoo, W.S.2
Ouaknine, M.3
Murakami, T.4
Fukada, T.5
-
9
-
-
80855137033
-
Barrier height determination of silicide-silicon contact by hybrid density functional simulation
-
10.1063/1.3657767 0003-6951 183110
-
Gao Q and Guo J 2011 Barrier height determination of silicide-silicon contact by hybrid density functional simulation Appl. Phys. Lett. 99 183110
-
(2011)
Appl. Phys. Lett.
, vol.99
, Issue.18
-
-
Gao, Q.1
Guo, J.2
-
10
-
-
35949017831
-
Accurate exchange-correlation potential for silicon and its discontinuity on addition of an electron
-
10.1103/PhysRevLett.56.2415 0031-9007
-
Godby R W, Schlüter M and Sham L J 1986 Accurate exchange-correlation potential for silicon and its discontinuity on addition of an electron Phys. Rev. Lett. 56 2415-8
-
(1986)
Phys. Rev. Lett.
, vol.56
, Issue.22
, pp. 2415-2418
-
-
Godby, R.W.1
Schlüter, M.2
Sham, L.J.3
-
11
-
-
3743067479
-
Theory of surface states
-
10.1103/PhysRev.138.A1689 0031-899X
-
Heine V 1965 Theory of surface states Phys. Rev. 138 A1689-96
-
(1965)
Phys. Rev.
, vol.138
, Issue.6 A
-
-
Heine, V.1
-
12
-
-
0000590516
-
Ab initio calculations of the β-SiC(001)/Al interface
-
10.1103/PhysRevB.57.2334 1098-0121 B
-
Hoekstra J and Kohyama M 1998 Ab initio calculations of the β-SiC(001)/Al interface Phys. Rev. B 57 2334-41
-
(1998)
Phys. Rev.
, vol.57
, Issue.4
, pp. 2334-2341
-
-
Hoekstra, J.1
Kohyama, M.2
-
13
-
-
76149138032
-
High-temperature contact formation on n-type silicon: Basic reactions and contact model for seed-layer contacts
-
10.1002/adfm.200901305 1616-301X
-
Hörteis M, Gutberlet T, Reller A and Glunz S W 2010 High-temperature contact formation on n-type silicon: basic reactions and contact model for seed-layer contacts Adv. Funct. Mater. 20 476-84
-
(2010)
Adv. Funct. Mater.
, vol.20
, Issue.3
, pp. 476-484
-
-
Hörteis, M.1
Gutberlet, T.2
Reller, A.3
Glunz, S.W.4
-
15
-
-
4444334734
-
Threshold voltage control in NiSi-gated mosfets through silicidation induced impurity segregation (SIIS)
-
Kedzierski J, Boyd D, Ronsheim P, Zafar S, Newbury J, Ott J, Cabral C, Ieong M and Haensch W 2003 Threshold voltage control in NiSi-gated mosfets through silicidation induced impurity segregation (SIIS) IEEE Int. Electron Devices Mtg, 2003. IEDM'03 Technical Digest pp 13.3.1-4
-
(2003)
IEEE Int. Electron Devices Mtg, 2003. IEDM'03 Technical Digest
, pp. 1331-1334
-
-
Kedzierski, J.1
Boyd, D.2
Ronsheim, P.3
Zafar, S.4
Newbury, J.5
Ott, J.6
Cabral, C.7
Ieong, M.8
Haensch, W.9
-
16
-
-
34248669042
-
Modulation of the effective work function of fully-silicided (FUSI) gate stacks
-
DOI 10.1016/j.mee.2007.04.002, PII S0167931707003516, INFOS 2007
-
Kittl J et al 2007 Modulation of the effective work function of fully-silicided (FUSI) gate stacks Microelectron. Eng. 84 1857-60 (Pubitemid 46776929)
-
(2007)
Microelectronic Engineering
, vol.84
, Issue.9-10
, pp. 1857-1860
-
-
Kittl, J.A.1
Lauwers, A.2
Pawlak, M.A.3
Veloso, A.4
Yu, H.Y.5
Chang, S.Z.6
Hoffmann, T.7
Pourtois, G.8
Brus, S.9
Demeurisse, C.10
Vrancken, C.11
Absil, P.P.12
Biesemans, S.13
-
17
-
-
33645465482
-
3Si fully silicided gates
-
10.1109/LED.2005.861404 0741-3106
-
3 Si fully silicided gates IEEE Electron Device Lett. 27 34-6
-
(2006)
IEEE Electron Device Lett.
, vol.27
, Issue.1
, pp. 34-36
-
-
Kittl, J.1
-
19
-
-
0001061183
-
Ab initio calculations of the β-SiC(001)/Ti interface
-
10.1103/PhysRevB.61.2672 1098-0121 B
-
Kohyama M and Hoekstra J 2000 Ab initio calculations of the β-SiC(001)/Ti interface Phys. Rev. B 61 2672-9
-
(2000)
Phys. Rev.
, vol.61
, Issue.4
, pp. 2672-2679
-
-
Kohyama, M.1
Hoekstra, J.2
-
20
-
-
27744460065
-
Ab initio molecular-dynamics simulation of the liquid-metal-amorphous- semiconductor transition in germanium
-
10.1103/PhysRevB.49.14251 0163-1829 B
-
Kresse G and Hafner J 1994 Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium Phys. Rev. B 49 14251
-
(1994)
Phys. Rev.
, vol.49
, Issue.20
, pp. 14251
-
-
Kresse, G.1
Hafner, J.2
-
21
-
-
0011236321
-
From ultrasoft pseudopotentials to the projector augmented-wave method
-
10.1103/PhysRevB.59.1758 1098-0121 B
-
Kresse G and Joubert D 1999 From ultrasoft pseudopotentials to the projector augmented-wave method Phys. Rev. B 59 1758
-
(1999)
Phys. Rev.
, vol.59
, Issue.3
, pp. 1758
-
-
Kresse, G.1
Joubert, D.2
-
22
-
-
0142055828
-
Towards implementation of a nickel silicide process for CMOS technologies
-
10.1016/S0167-9317(03)00380-0 0167-9317
-
Lavoie C, d'Heurle F, Detavernier C and Cabral C Jr 2003 Towards implementation of a nickel silicide process for CMOS technologies Microelectron. Eng. 70 144-57
-
(2003)
Microelectron. Eng.
, vol.70
, Issue.2-4
, pp. 144-157
-
-
Lavoie, C.1
D'Heurle, F.2
Detavernier, C.3
Cabral, C.4
-
23
-
-
83555163728
-
Electrical contacts to one- and two-dimensional nanomaterials
-
10.1038/nnano.2011.196 1748-3387
-
Léonard F and Talin A A 2011 Electrical contacts to one- and two-dimensional nanomaterials Nature Nanotechnol. 6 773
-
(2011)
Nature Nanotechnol.
, vol.6
, Issue.12
, pp. 773
-
-
Léonard, F.1
Talin, A.A.2
-
24
-
-
84864705805
-
Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning
-
10.1063/1.4742861 0003-6951 052110
-
Lin L, Guo Y and Robertson J 2012 Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning Appl. Phys. Lett. 101 052110
-
(2012)
Appl. Phys. Lett.
, vol.101
, Issue.5
-
-
Lin, L.1
Guo, Y.2
Robertson, J.3
-
25
-
-
0000025086
-
Optimal meshes for integrals in real- and reciprocal-space unit cells
-
10.1103/PhysRevB.45.13891 0163-1829 B
-
Moreno J and Soler J M 1992 Optimal meshes for integrals in real- and reciprocal-space unit cells Phys. Rev. B 45 13891-8
-
(1992)
Phys. Rev.
, vol.45
, Issue.24
, pp. 13891-13898
-
-
Moreno, J.1
Soler, J.M.2
-
26
-
-
80053582373
-
Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface
-
10.1103/PhysRevB.84.115323 1098-0121 B 115323
-
Nishi Y, Yamauchi T, Marukame T, Kinoshita A, Koga J and Kato K 2011 Schottky barrier height modulation by atomic dipoles at the silicide/silicon interface Phys. Rev. B 84 115323
-
(2011)
Phys. Rev.
, vol.84
, Issue.11
-
-
Nishi, Y.1
Yamauchi, T.2
Marukame, T.3
Kinoshita, A.4
Koga, J.5
Kato, K.6
-
27
-
-
4243497217
-
Interfacial reaction and Schottky barrier in metal-silicon systems
-
10.1103/PhysRevLett.44.284 0031-9007
-
Ottaviani G, Tu K N and Mayer J W 1980 Interfacial reaction and Schottky barrier in metal-silicon systems Phys. Rev. Lett. 44 284-7
-
(1980)
Phys. Rev. Lett.
, vol.44
, Issue.4
, pp. 284-287
-
-
Ottaviani, G.1
Tu, K.N.2
Mayer, J.W.3
-
28
-
-
4243943295
-
Generalized gradient approximation made simple
-
10.1103/PhysRevLett.77.3865 0031-9007
-
Perdew J P, Burke K and Ernzerhof M 1996 Generalized gradient approximation made simple Phys. Rev. Lett. 77 3865
-
(1996)
Phys. Rev. Lett.
, vol.77
, Issue.18
, pp. 3865
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
29
-
-
0032493155
-
Band engineering at interfaces: Theory and numerical experiments
-
10.1088/0022-3727/31/11/002 0022-3727
-
Peressi M, Binggeli N and Baldereschi A 1998 Band engineering at interfaces: theory and numerical experiments J. Phys. D: Appl. Phys. 31 1273
-
(1998)
J. Phys. D: Appl. Phys.
, vol.31
, Issue.11
, pp. 1273
-
-
Peressi, M.1
Binggeli, N.2
Baldereschi, A.3
-
30
-
-
59149099649
-
Defect formation energies without the band-gap problem: Combining density-functional theory and the GW approach for the silicon self-interstitial
-
10.1103/PhysRevLett.102.026402 0031-9007 026402
-
Rinke P, Janotti A, Scheffler M and Van de Walle C G 2009 Defect formation energies without the band-gap problem: combining density-functional theory and the GW approach for the silicon self-interstitial Phys. Rev. Lett. 102 026402
-
(2009)
Phys. Rev. Lett.
, vol.102
, Issue.2
-
-
Rinke, P.1
Janotti, A.2
Scheffler, M.3
Van De Walle, C.G.4
-
31
-
-
77649100442
-
Summary abstract: Correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces
-
10.1116/1.571629 0022-5355
-
Schmid P E, Ho P S and Tan T Y 1982 Summary abstract: correlation between Schottky barrier height and phase stoichiometry/structure of silicide-silicon interfaces J. Vac. Sci. Technol. 20 688-9
-
(1982)
J. Vac. Sci. Technol.
, vol.20
, Issue.3
, pp. 688-689
-
-
Schmid, P.E.1
Ho, P.S.2
Tan, T.Y.3
-
32
-
-
33748761532
-
Zur Halbleitertheorie der Sperrschicht und Spitzengleichrichter
-
10.1007/BF01340116 1434-6001
-
Schottky W 1939 Zur Halbleitertheorie der Sperrschicht und Spitzengleichrichter Z. Phys. 113 367-414
-
(1939)
Z. Phys.
, vol.113
, Issue.5-6
, pp. 367-414
-
-
Schottky, W.1
-
33
-
-
33646061553
-
Vereinfachte und erweiterte Theorie der Randschichtgleichrichter
-
10.1007/BF01329843 1434-6001
-
Schottky W 1942 Vereinfachte und erweiterte Theorie der Randschichtgleichrichter Z. Phys. 118 539-92
-
(1942)
Z. Phys.
, vol.118
, Issue.9-10
, pp. 539-592
-
-
Schottky, W.1
-
36
-
-
84856430931
-
Band engineering in silicide alloys
-
10.1103/PhysRevB.85.035311 1098-0121 B 035311
-
Slepko A and Demkov A A 2012 Band engineering in silicide alloys Phys. Rev. B 85 035311
-
(2012)
Phys. Rev.
, vol.85
, Issue.3
-
-
Slepko, A.1
Demkov, A.A.2
-
37
-
-
79955713337
-
Work function engineering in silicides: Chlorine doping in NiSi
-
10.1063/1.3573481 0021-8979 083703
-
Slepko A, Demkov A A, Loh W-Y, Majhi P and Bersuker G 2011 Work function engineering in silicides: chlorine doping in NiSi J. Appl. Phys. 109 083703
-
(2011)
J. Appl. Phys.
, vol.109
, Issue.8
-
-
Slepko, A.1
Demkov, A.A.2
Loh, W.-Y.3
Majhi, P.4
Bersuker, G.5
-
38
-
-
0035894198
-
Ab initio calculations of the 3c-SiC(111)/Ti polar interfaces
-
10.1103/PhysRevB.64.235308 1098-0121 B 235308
-
Tanaka S and Kohyama M 2001 Ab initio calculations of the 3c-SiC(111)/Ti polar interfaces Phys. Rev. B 64 235308
-
(2001)
Phys. Rev.
, vol.64
, Issue.23
-
-
Tanaka, S.1
Kohyama, M.2
-
39
-
-
84864703494
-
Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts
-
10.1021/nl3011676 1530-6984
-
Tang W, Dayeh S A, Picraux S T, Huang J Y and Tu K-N 2012 Ultrashort channel silicon nanowire transistors with nickel silicide source/drain contacts Nano Lett. 12 3979-85
-
(2012)
Nano Lett.
, vol.12
, Issue.8
, pp. 3979-3985
-
-
Tang, W.1
Dayeh, S.A.2
Picraux, S.T.3
Huang, J.Y.4
Tu, K.-N.5
-
40
-
-
0037429993
-
Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium
-
10.1063/1.1559418 0003-6951
-
Tao M, Udeshi D, Basit N, Maldonado E and Kirk W P 2003 Removal of dangling bonds and surface states on silicon (001) with a monolayer of selenium Appl. Phys. Lett. 82 1559-61
-
(2003)
Appl. Phys. Lett.
, vol.82
, Issue.10
, pp. 1559-1561
-
-
Tao, M.1
Udeshi, D.2
Basit, N.3
Maldonado, E.4
Kirk, W.P.5
-
41
-
-
0001597428
-
Schottky barrier heights and the continuum of gap states
-
10.1103/PhysRevLett.52.465 0031-9007
-
Tersoff J 1984 Schottky barrier heights and the continuum of gap states Phys. Rev. Lett. 52 465-8
-
(1984)
Phys. Rev. Lett.
, vol.52
, Issue.6
, pp. 465-468
-
-
Tersoff, J.1
-
42
-
-
0001237346
-
Schottky-barrier formation at single-crystal metal-semiconductor interfaces
-
10.1103/PhysRevLett.52.461 0031-9007
-
Tung R T 1984 Schottky-barrier formation at single-crystal metal-semiconductor interfaces Phys. Rev. Lett. 52 461-4
-
(1984)
Phys. Rev. Lett.
, vol.52
, Issue.6
, pp. 461-464
-
-
Tung, R.T.1
-
43
-
-
20544463421
-
Schottky barrier height of metal contacts to p-type alpha 6H-SiC
-
10.1063/1.355948 0021-8979
-
Waldrop J R 1994 Schottky barrier height of metal contacts to p-type alpha 6H-SiC J. Appl. Phys. 75 4548-50
-
(1994)
J. Appl. Phys.
, vol.75
, Issue.9
, pp. 4548-4550
-
-
Waldrop, J.R.1
-
44
-
-
21544450621
-
Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: Crystal face dependence
-
10.1063/1.109257 0003-6951
-
Waldrop J R and Grant R W 1993 Schottky barrier height and interface chemistry of annealed metal contacts to alpha 6H-SiC: crystal face dependence Appl. Phys. Lett. 62 2685-7
-
(1993)
Appl. Phys. Lett.
, vol.62
, Issue.21
, pp. 2685-2687
-
-
Waldrop, J.R.1
Grant, R.W.2
-
45
-
-
18744368540
-
Tuning of NiSiSi Schottky barrier heights by sulfur segregation during Ni silicidation
-
DOI 10.1063/1.1863442, 062108
-
Zhao Q T, Breuer U, Rije E, Lenk S and Mantl S 2005 Tuning of NiSi/Si Schottky barrier heights by sulfur segregation during Ni silicidation Appl. Phys. Lett. 86 062108 (Pubitemid 40665521)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.6
, pp. 1-3
-
-
Zhao, Q.T.1
Breuer, U.2
Rije, E.3
Lenk, S.4
Mantl, S.5
|