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Physical Review B - Condensed Matter and Materials Physics

Volumn 86, Issue 24, 2012, Pages

Atomistic simulation of doping effects on growth and charge transport in Si/Ag interfaces in high-performance solar cells

(2) Butler, Keith T a Harding, John H a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84871540902 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.86.245319 Document Type: Article

Times cited : (14)

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