High-Temperature contact formation on n-Type silicon: Basic reactions and contact model for Seed-Layer contacts

Advanced Functional Materials

Volumn 20, Issue 3, 2010, Pages 476-484

  Hörteis, Matthias ^a   Gutberlet, Tobias ^b   Reller, Armin ^c   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIREFLECTION LAYERS; CONTACT FORMATION; CONTACT MATERIAL; CONTACT MODELS; CONTACT STRUCTURE; DIELECTRIC LAYER; EMITTER LAYERS; ETCHING PROCESS; FIRING PROCESS; GLASS FRIT; HIGH TEMPERATURE; HIGH TEMPERATURE PROCESS; KEY FEATURE; LOW-OHMIC CONTACT; MASS SPECTROSCOPY; MECHANICAL ADHESION; METAL-SEMICONDUCTOR CONTACTS; N TYPE SILICON; PROCESS STEPS; SEED LAYER; SPECIFIC CONTACT RESISTANCES; THERMOGRAVIMETRIC-DIFFERENTIAL THERMAL ANALYSIS;

FUNCTIONAL MATERIALS; GLASS; GRAFTING (CHEMICAL); INK; MASS SPECTROMETRY; MICROELECTRONICS; OHMIC CONTACTS; SILICON SOLAR CELLS; SILVER; SOLAR CELLS; SYNTHESIS (CHEMICAL); THERMOANALYSIS;

DIELECTRIC MATERIALS;

EID: 76149138032     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200901305     Document Type: Article

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