Metal silicide Schottky barriers on Si and Ge show weaker Fermi level pinning

Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

  Lin, L ^a   Guo, Y ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; EXPERIMENTAL DATA; FERMI LEVEL PINNING; METAL SILICIDE; SCHOTTKY BARRIERS; SI SURFACES; STANDARD METAL;

DANGLING BONDS; FERMI LEVEL; GERMANIUM; INTERFACE STATES; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON;

METALS;

EID: 84864705805     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4742861     Document Type: Article

References (33)

1. A. Dimoulas, P. Tsipas, A. Sotiropoulos, and E. K. Evangelou, Appl. Phys. Lett. 89, 252110 (2006). 10.1063/1.2410241
2. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701
3. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Express 1, 051406 (2008). 10.1143/APEX.1.051406
4. M. Kobayasi, A. Kinoshita, K. Saraswat, H. S. P. Wong, and Y. Nishi, Dig. Tech. Pap.-Symp. VLSI Technol. 2008, 54;
5. A. M. Roy, J. Y. Lin, and K. C. Saraswat, IEEE Electron Device Lett. 31, 1077 (2010). 10.1109/LED.2010.2058838
6. K. N. Tu, R. D. Thompson, and B. Y. Taur, Appl. Phys. Lett. 38, 626 (1981); 10.1063/1.92457
7. J. A. Knapp and S. T. Picraux, Appl. Phys. Lett. 48, 466 (1986). 10.1063/1.96532
8. K. J. Chen and K. N. Tu, Mater. Sci. Rep. 6, 53 (1991). 10.1016/0920-2307(91)90004-7
9. J. L. Freeouf, Solid State Commun. 33, 1059 (1980). 10.1016/0038-1098(80) 90317-8
10. S. Zhu, J. Chen, M. F. Li, S. J. Lee, J. Nsingh, C. X. Zhu, A. Du, C. H. Tung, A. Chin, and D. L. Kwong, IEEE Electron Device Lett. 25, 565 (2004). 10.1109/LED.2004.831582
11. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1977). 10.1063/1.323539
12. S. Kurtin, T. C. McGill, and C. A. Mead, Phys. Rev. Lett. 22, 1433 (1969). 10.1103/PhysRevLett.22.1433
13. W. Monch, Phys. Rev. Lett. 58, 1260 (1986). 10.1103/PhysRevLett.58.1260
14. W. Mönch, Surf. Sci. 300, 928 (1994); 10.1016/0039-6028(94)90707-2
15. W. Mönch, Appl. Surf. Sci. 92, 367 (1996). 10.1016/0169-4332(95) 00257-X
16. J. Tersoff, Phys. Rev. Lett. 52, 465 (1984). 10.1103/PhysRevLett.52.465
17. W. E. Spicer, I. Lindau, P. Skeath, C. Y. Su, and P. Chye, Phys. Rev. Lett. 44, 420 (1980). 10.1103/PhysRevLett.44.420
18. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000); 10.1116/1.591472
19. J. Robertson, Solid-State Electron. 49, 283 (2005). 10.1016/j.sse.2004. 11.011
20. J. Bardi, N. Binggeli, and A. Baldereschi, Phys. Rev. B 59, 8054 (1999). 10.1103/PhysRevB.59.8054
21. K. Y. Tse and J. Robertson, Phys. Rev. Lett. 99, 086805 (2007). 10.1103/PhysRevLett.99.086805
22. M. S. Joo, C. S. Park, B. J. Cho, N. Balasubramanian, and D. L. Kwong, J. Vac. Sci. Technol. B 24, 1341 (2006). 10.1116/1.2198849
23. P. Muret, T. A. Nguyen, N. Frangis, and J. Van Landuyt, Phys. Rev. B 56, 9286 (1997). 10.1103/PhysRevB.56.9286
24. Y. Kamimuta, K. Iwamoto, Y. Nunoshige, A. Hirano, W. Mizubayashi, Y. Watanabe, S. Migita, A. Ogawa, H. Ota, T. Nabatame, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 2007, 341.
25. R. T. Tung, Phys. Rev. Lett. 52, 461 (1984). 10.1103/PhysRevLett.52.461
26. R. T. Tung, Phys. Rev. Lett. 84, 6078 (2000). 10.1103/PhysRevLett.84.6078
27. G. P. Das, P. Blochl, O. K. Andreson, N. E. Christiansen, and O. Gunnarsson, Phys. Rev. Lett. 63, 1168 (1989). 10.1103/PhysRevLett.63.1168
28. H. Fujitani and S. Asano, Phys. Rev. B 50, 8681 (1994). 10.1103/PhysRevB.50.8681
29. S. Vandre, T. Kalka, C. Preinesberger, and M. Dahne-Prietsch, Phys. Rev. Lett. 82, 1927 (1999). 10.1103/PhysRevLett.82.1927
30. W. H. Butler, X. G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B 63, 054416 (2001); 10.1103/PhysRevB.63.054416
31. X. G. Zhang and W. H. Butler, J. Phys. Condens. Matter 15, R1603 (2003). 10.1088/0953-8984/15/41/R01
32. K. Yamane, K. Hamaya, Y. Ando, Y. Enomoto, K. Yamamoto, T. G. Sadoh, and M. Miyao, Appl. Phys. Lett. 96, 162104 (2010). 10.1063/1.3368701
33. In the Ge calculation, we used a modified Ge pseudopotential as in M Houssa, Appl. Phys. Lett. 92, 242101 (2008) to offset the LDA band gap error, otherwise this range of barrier heights could not be covered. 10.1063/1.2944892