Barrier height determination of silicide-silicon contact by hybrid density functional simulation

Applied Physics Letters

Volumn 99, Issue 18, 2011, Pages

  Gao, Qun ^a   Guo, Jing ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; AB INITIO SIMULATIONS; ACCURATE PREDICTION; BARRIER HEIGHTS; DEVICE TECHNOLOGIES; FIRST-PRINCIPLES; FUNCTIONAL CALCULATIONS; FUNCTIONAL SIMULATIONS; GENERALIZED GRADIENT APPROXIMATIONS; HYBRID DENSITY FUNCTIONAL; METAL-INDUCED GAP STATE; SCHOTTKY BARRIER HEIGHTS;

CALCULATIONS; DOPING (ADDITIVES); SCHOTTKY BARRIER DIODES;

SILICIDES;

EID: 80855137033     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3657767     Document Type: Article

References (16)

1. S. D. Kim, Solid State Electron. 53 (10), 1112 (2009). 10.1016/j.sse.2009.06.004
2. J. Bardeen, Phys. Rev. 71 (10), 717 (1947). 10.1103/PhysRev.71.717
3. V. Heine, Phys. Rev. 138 (6A), A1689 (1965). 10.1103/PhysRev.138.A1689
4. J. Tersoff, Phys. Rev. Lett. 52 (6), 465 (1984). 10.1103/PhysRevLett.52. 465
5. R. T. Tung, Mater. Sci. Eng. R. 35 (1-3), 1 (2001). 10.1016/S0927- 796X(01)00037-7
6. Z. Zhen, Q. Zhijun, L. Ran, M. Ostling, and Z. Shi-Li, IEEE Electron Device Lett. 28 (7), 565 (2007). 10.1109/LED.2007.900295
7. M. Tao, D. Udeshi, N. Basit, E. Maldonado, and W. P. Kirk, Appl. Phys. Lett. 82 (10), 1559 (2003). 10.1063/1.1559418
8. J. Heyd and G. E. Scuseria, J Chem. Phys. 121 (3), 1187 (2004). 10.1063/1.1760074
9. See http://cms.mpi.univie.ac.at/vasp for Vienna Ab-inito Simulation Package (VASP).
10. S. D. Kenny, I. Goldfarb, E. Akhmatskaya, and G. A. D. Briggs, Surf. Sci. 465 (3), 259 (2000). 10.1016/S0039-6028(00)00683-X
11. J. M. Andrews and J. C. Phillips, Phys. Rev. Lett. 35 (1), 56 (1975). 10.1103/PhysRevLett.35.56
12. K. Hirose, I. Ohdomari, and M. Uda, Phys. Rev. B 37 (12), 6929 (1988). 10.1103/PhysRevB.37.6929
13. R. T. Tung, A. F. J. Levi, J. P. Sullivan, and F. Schrey, Phys. Rev. Lett. 66 (1), 72 (1991). 10.1103/PhysRevLett.66.72
14. W. Hoong-Shing, C. Lap, G. Samudra, and Y. Yee-Chia, IEEE Electron Device Lett. 28 (8), 703 (2007). 10.1109/LED.2007.901668
15. Y. Nishi, Y. Tsuchiya, A. Kinoshita, T. Yamauchi, and J. Koga, IEDM Tech. Dig. 2007, 137. 10.1109/IEDM.2007.4418883
16. Q. T. Zhao, U. Breuer, E. Rije, S. Lenk, and S. Mant, Appl. Phys. Lett. 86, 062108 (2005). 10.1063/1.1863442