SCOPUS 정보 검색 플랫폼

Volumn 61, Issue 17, 2013, Pages 6587-6596

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

(10) El Gmili, Y a,b,c Orsal, G a,d Pantzas, K e,f Moudakir, T b Sundaram, S b Patriarche, G e Hester, J b Ahaitouf, A a,b,c Salvestrini, J P a,d Ougazzaden, A b,f

a UNIVERSITÉ DE LORRAINE (France)

b CNRS (France)

c SIDI MOHAMED BEN ABDELLAH UNIVERSITY (Morocco)

d SUPELEC (France)

e UNIV PARIS SUD (France)

f GEORGIA INSTITUTE OF TECHNOLOGY (France)

Author keywords

Deposition and fabrication; InGaN; Multilayer design; Semiconductor materials; Thin films

Indexed keywords

CONCENTRATION FLUCTUATION; DEPOSITION AND FABRICATION; INGAN; MULTI-LAYERED STRUCTURE; MULTILAYER DESIGNS; SOLAR-CELL APPLICATIONS; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL QUALITIES;

DEPOSITION; FILM PREPARATION; MULTILAYERS; SEMICONDUCTOR MATERIALS; THIN FILMS; X RAY DIFFRACTION;

SOLAR CELLS;

EID: 84883743141 PISSN: 13596454 EISSN: None Source Type: Journal
DOI: 10.1016/j.actamat.2013.07.041 Document Type: Article

Times cited : (39)

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