GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 428-432

  Gautier, S ^a   Sartel, C ^a   Ould Saad, S ^b   Martin, J ^a   Sirenko, A ^c   Ougazzaden, A ^d  

^a CNRS   (France)

^b SUPELEC   (France)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^d GEORGIA TECH LORRAINE   (France)

Author keywords

A1. Micro Raman spectroscopy; A3. Low temperature epitaxy; A3. Metal organic vapour phase epitaxy; A3. New reactor design; B2. Gallium nitride

Indexed keywords

CHEMICAL REACTORS; GALLIUM NITRIDE; HIGH TEMPERATURE EFFECTS; LIGHT SCATTERING; METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY; THIN FILMS;

DIMETHYLHYDRAZINE (DMHY); GROWTH TEMPERATURE; LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY (LP-MOVPE); OPTICAL PHONONS;

FILM GROWTH;

EID: 33846434840     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.064     Document Type: Article

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