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Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

Quantized level transitions and modification in InGaN/GaN multiple quantum wells

(3) Li, Jinchai a Li, Shuping a Kang, Junyong a

a XIAMEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTROLUMINESCENCE; PARTICLE BEAM INJECTION; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

INTERBAND TRANSITIONS; QUANTIZED ELECTRON LEVEL;

ELECTRON TRANSITIONS;

EID: 40849120105 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2898218 Document Type: Article

Times cited : (10)

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