Spatial variation of luminescence of InGaN alloys measured by highly-spatially-resolved scanning cathodoluminescence

Materials Science and Engineering: B

Volumn 93, Issue 1-3, 2002, Pages 19-23

  Bertram, F ^a   Srinivasan, S ^a   Liu, R ^a   Geng, L ^a   Ponce, F A ^a   Riemann, T ^b   Christen, J ^b   Tanaka, S ^c   Omiya, H ^c   Nakagawa, Y ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c NICHIA CORPORATION   (Japan)

Author keywords

Cathodoluminescence; InGaN; Inversion domains; Phase separation; Pinholes

Indexed keywords

CATHODOLUMINESCENCE; DEFECTS; FILM GROWTH; MICROSTRUCTURE; PHASE SEPARATION; SURFACE ROUGHNESS;

MONOCHROMATIC IMAGES;

INDIUM ALLOYS;

EID: 0037198540     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(02)00009-0     Document Type: Conference Paper

References (9)