Characteristics of the surface microstructures in thick inGaN layers on GaN

Optical Materials Express

Volumn 3, Issue 8, 2013, Pages 1111-1118

  El Gmili, Y ^a   Orsal, G ^b,c   Pantzas, K ^a,d   Ahaitouf, A ^a   Moudakir, T ^a   Gautier, S ^b,c   Patriarche, G ^e   Troadec, D ^f   Salvestrini, J P ^b,c   Ougazzaden, A ^a,d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (France)

^b UNIVERSITÉ DE LORRAINE   (France)

^c SUPELEC   (France)

^d GEORGIA TECH LORRAINE   (France)

^e UNIV PARIS SUD   (France)

^f UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DEPTH-RESOLVED; LUMINESCENCE PEAK; MICRO-STRUCTURAL; OPTICAL EMISSIONS; SPATIAL FLUCTUATION; SURFACE MICROSTRUCTURES; THREADING DISLOCATION;

INDIUM; SURFACE DEFECTS; THREE DIMENSIONAL;

MICROSTRUCTURE;

EID: 84883739732     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.3.001111     Document Type: Article

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