Phase separation resulting from mg doping in p-InGaN Film grown on GaN/sapphire template

Applied Physics Express

Volumn 3, Issue 11, 2010, Pages

  Sang, Liwen ^a   Takeguchi, Masaki ^a   Lee, Woong ^a   Nakayama, Yoshiko ^a   Lozac'h, Mickael ^a   Sekiguchi, Takashi ^a   Sumiya, Masatomo ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; GAN TEMPLATE; GAN/SAPPHIRE; HIGH-DENSITY; LAYERED STRUCTURES; MG-DOPING; P-INGAN; SPONTANEOUS FORMATION; STRAIN STATE; TWO LAYERS; TWO-LAYERED STRUCTURES; X-RAY RECIPROCAL SPACE MAPPING;

GALLIUM NITRIDE; MAPPING;

PHASE SEPARATION;

EID: 78549294163     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.111004     Document Type: Article

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