SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 518, Issue 17, 2010, Pages 5028-5031

Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer

(8) Wang, H a Jiang, D S a Jahn, U b Zhu, J J a Zhao, D G a Liu, Z S a Zhang, S M a Yang, H c

a INSTITUTE OF SEMICONDUCTORS (China)

b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK (Germany)

c SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

Author keywords

Cathodeluminescence; Gallium Nitride; Indium Gallium Nitride; Metal Organic Chemical Vapor Deposition; X ray Diffraction

Indexed keywords

CATHODELUMINESCENCE; COMPOSITION FLUCTUATIONS; COMPOSITION INHOMOGENEITY; COMPOSITION VARIATION; COMPRESSIVE STRAIN; DEPTH DISTRIBUTION; INDIUM GALLIUM NITRIDE; LATERAL DIRECTIONS; METAL-ORGANIC CHEMICAL VAPOR DEPOSITION; PEAK ENERGY;

CATHODOLUMINESCENCE; DIFFRACTION; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDUSTRIAL CHEMICALS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; ORGANIC CHEMICALS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77955658678 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.163 Document Type: Article

Times cited : (20)

References (11)

1
- 17644370007
- Hasna Hamzaoui, Ahmed S. Bouazzi, and Bahri Rezig Sol. Energy Mater. Sol. Cells 87 2005 595
- (2005) Sol. Energy Mater. Sol. Cells , vol.87 , pp. 595
- Hamzaoui, H.¹ Bouazzi, A.S.² Rezig, B.³

2
- 0031271221
- C. Kisielowski, Z. Liliental-Weber, and S. Nakamura Jpn. J. Appl. Phys. 36 1997 6932
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 6932
- Kisielowski, C.¹ Liliental-Weber, Z.² Nakamura, S.³

3
- 19744383761
- H.J. Chang, C.H. Chen, Y.F. Chen, T.Y. Lin, L.C. Chen, K.H. Chen, and Z.H. Lan Appl. Phys. Lett. 86 2005 021911
- (2005) Appl. Phys. Lett. , vol.86 , pp. 021911
- Chang, H.J.¹ Chen, C.H.² Chen, Y.F.³ Lin, T.Y.⁴ Chen, L.C.⁵ Chen, K.H.⁶ Lan, Z.H.⁷

4
- 0002818674
- S.Y. Karpov MRS Internet J. Nitride Semicond. Res. 3 1998 16
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 16
- Karpov, S.Y.¹

5
- 0000536047
- S. Pereira, M.R. Correia, E. Pereira, K.P. O'Donnell, C. Trager-Cowan, F. Sweeney, and E. Alves Phys. Rev. B 64 2001 205311
- (2001) Phys. Rev. B , vol.64 , pp. 205311
- Pereira, S.¹ Correia, M.R.² Pereira, E.³ O'Donnell, K.P.⁴ Trager-Cowan, C.⁵ Sweeney, F.⁶ Alves, E.⁷

6
- 79956029525
- S. Pereira, M.R. Correia, E. Pereira, K.P. O'Donnell, E. Alves, A.D. Sequeira, N. Franco, I.M. Watson, and C.J. Deatcher Appl. Phys. Lett. 80 2002 3913
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3913
- Pereira, S.¹ Correia, M.R.² Pereira, E.³ O'Donnell, K.P.⁴ Alves, E.⁵ Sequeira, A.D.⁶ Franco, N.⁷ Watson, I.M.⁸ Deatcher, C.J.⁹

7
- 0001663822
- K. Hiramatsu, Y. Kawaguchi, M. Shimizu, N. Sawaki, T. Zheleva, R.F. Davis, H. Tsuda, W. Taki, N. Kuwano, and K. Oki MRS Internet J. Nitride Semicond. Res. 2 1997 6
- (1997) MRS Internet J. Nitride Semicond. Res. , vol.2 , pp. 6
- Hiramatsu, K.¹ Kawaguchi, Y.² Shimizu, M.³ Sawaki, N.⁴ Zheleva, T.⁵ Davis, R.F.⁶ Tsuda, H.⁷ Taki, W.⁸ Kuwano, N.⁹ Oki, K.¹⁰

8
- 0032555804
- I.H. Kim, H.S. Park, Y.J. Park, and T. Kim Appl. Phys. Lett. 73 1998 1634
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1634
- Kim, I.H.¹ Park, H.S.² Park, Y.J.³ Kim, T.⁴

9
- 33645920309
- M. Shiojiri, C.C. Chuo, J.T. Hsu, J.R. Yang, and H. Saijo J. Appl. Phys. 99 2006 073505
- (2006) J. Appl. Phys. , vol.99 , pp. 073505
- Shiojiri, M.¹ Chuo, C.C.² Hsu, J.T.³ Yang, J.R.⁴ Saijo, H.⁵

10
- 2942737374
- J.C. Zhang, D.G. Zhao, J.F. Wang, Y.T. Wang, J. Chen, J.P. Liu, and H. Yang J. Cryst. Growth 268 2004 24
- (2004) J. Cryst. Growth , vol.268 , pp. 24
- Zhang, J.C.¹ Zhao, D.G.² Wang, J.F.³ Wang, Y.T.⁴ Chen, J.⁵ Liu, J.P.⁶ Yang, H.⁷

11
- 3342960393
- K.P. O'Donnell, R.W. Martin, and P.G. Middleton Phys. Rev. Lett. 82 1999 237
- (1999) Phys. Rev. Lett. , vol.82 , pp. 237
- O'Donnell, K.P.¹ Martin, R.W.² Middleton, P.G.³

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