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Volumn 113, Issue , 2014, Pages 114-122

Recycling a slurry for reuse in chemical mechanical planarization of tungsten wafer: Effect of chemical adjustments and comparison between static and dynamic experiments

Author keywords

Chemical adjustments; Chemical mechanical polishing; Design of experiments; Slurry; Tungsten film

Indexed keywords

CHEMICAL COMPOSITIONS; CHEMICAL MECHANICAL POLISHING(CMP); COST OF MANUFACTURING; DYNAMIC EXPERIMENT; EFFECT OF CHEMICALS; MICROCHIP PROCESSORS; STATIC AND DYNAMIC CONDITIONS; TUNGSTEN FILMS;

EID: 84883369039     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.07.022     Document Type: Article
Times cited : (11)

References (51)
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    • M. Anik, and K. Osseo-Asare Oxidation and dissolution characteristics of tungsten: application to chemical mechanical polishing P.C. Andricacos, J.L. Stickney, P.C. Searson, C. Reidsema-Simpson, G.M. Oleszek, Electrochemical Processing in ULSI Fabricatrion III: Proceedings of the International Symposium 2002 The Electrochemical Society 234 243
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.