Retreatment of silicon slurry by membrane processes

Journal of Hazardous Materials

Volumn 192, Issue 2, 2011, Pages 440-450

  Testa, F ^a,b   Coetsier, C ^a   Carretier, E ^a   Ennahali, M ^b   Laborie, B ^b   Serafino, C ^c   Bulgarelli, F ^c   Moulin, P ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b KEMESYS   (France)

^c Rockwood Wafer reclaim France ^*  (France)

Author keywords

CMP; Electronic effluents; Membrane processes; Retreatment; Reused; Slurry

Indexed keywords

CMP; ELECTRONIC EFFLUENTS; MEMBRANE PROCESSES; RETREATMENT; REUSED;

CHEMICAL ANALYSIS; CHEMICAL MECHANICAL POLISHING; EFFLUENTS; POLISHING; ULTRAFILTRATION;

SLURRIES;

SILICON;

EFFLUENT; ELECTRONIC EQUIPMENT; LABORATORY METHOD; MEMBRANE; PERFORMANCE ASSESSMENT; PHYSICOCHEMICAL PROPERTY; RECYCLING; SILICON; SLURRY; ULTRAFILTRATION; WASTE TREATMENT;

ARTICLE; BIOTECHNOLOGICAL PROCEDURES; CHEMICAL AND MECHANICAL POLISHING; CONCENTRATION (PARAMETERS); COST CONTROL; DILUTION; EFFLUENT; ENVIRONMENTAL IMPACT; MEMBRANE PERMEABILITY; PARTICLE SIZE; PH; PHYSICAL CHEMISTRY; TURBIDITY; ULTRAFILTRATION;

MEMBRANES, ARTIFICIAL; SILICON;

EID: 79960172183     PISSN: 03043894     EISSN: 18733336     Source Type: Journal    
DOI: 10.1016/j.jhazmat.2011.05.016     Document Type: Article

References (17)

1. Bibby T.F.A., Adams J.A., Holland K., Krulik G.A., Parikh P. CMP CoO reduction: slurry reprocessing. Thin Solid Films 1997, 308-309:538-542.
2. Larsen-Basse J., Liang H. Probable role of abrasion in chemo-mechanical polishing of tungsten. Wear 1999, 233-235:647-654.
3. Li Y. Microelectronic Applications of Chemical mechanical Planarization 2007, Wiley Interscience, New Jersey USA.
4. Seal S., Opila R.L., Sundaram K.B., Singh R. Chemical Mechanical Planarization IV: Proceedings of the International Symposium 2003, The Electrochemical Society, Inc., Pennington, New Jersey.
5. Philipossian A., Mitchell E. Slurry utilization efficiency studies in chemical mechanical planarization. Jpn. J. Appl. Phys., Part 2003, 42:7259-7264.
6. Seo Y.J., Park S.W., Kim N.H., Chang E.G., Lee W.S. Chemical mechanical polishing performances by filtering and retreatment of used silica abrasives slurry. Microelectron. Eng. 2005, 77:358-364.
7. Lee W.S., Kim S.Y., Seo Y.J., Lee J.K. An optimization of tungsten plug chemical mechanical polishing (CMP) using different consumables. J. Mater. Sci. 2001, 12:63-68.
8. Matijevic E., Babu S.V. Colloid aspects of chemical-mechanical planarization. J. Colloid Interface Sci. 2008, 320:219-237.
9. Zantye P.B., Kumar A., Sikder A.K. Chemical mechanical planarization for microelectronics applications. Mater. Sci. Eng., R 2004, 45:89-220.
10. Philipossian A., Mitchell E. Performing mean residence time analysis of CMP processes. Micro 2002, 20:85-185.
11. S. Kurisawa, Slurry recycling apparatus and slurry recycling method for chemical-mechanical polishing technique, US Patent 6183352 (2001).
12. M. Uto, N. Kondo, Grinding slurry recycling apparatus, US Patent 6547961 (2003).
13. G.L. Corlett, G.A. Roberson Jr., Method and apparatus for recovery of water and slurry abrasives used for chemical and mechanical planarization, US Patent 6096185 (2000).
14. Ndiaye P.I., Moulin P., Dominguez L., Millet J.C., Charbit F. Treatment of silica effluents: ultrafiltration or coagulation-decantation. J. Hazard. Mater. 2004, 116:75-81.
15. J.H. Chang, K.J. Lee, J.G. Park, Slurry recycling system and method for CMP apparatus, US Patent 6866784 (2005).
16. Seo Y.-J., Kim S.-Y., Choi Y.-O., Oh Y.-T., Lee W.-S. Effects of slurry filter size on the chemical mechanical polishing (CMP) defect density. Mater. Lett. 2004, 58:2091-2095.
17. Seo Y.-J., Kim S.-Y., Lee W.-S. Advantages of point of use (POU) slurry filter and high spray method for reduction of CMP process defects. Microelectron. Eng. 2003, 70:1-6.