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Volumn 259, Issue 7-12, 2005, Pages 1299-1307

Effects of K3[Fe(CN)6] slurry's pH value and applied potential on tungsten removal rate for chemical-mechanical planarization application

(6) Akonko, S B a Li, D Y a Ziomek Moroz, M b Hawk, J b Miller, A c Cadien, K c

a UNIVERSITY OF ALBERTA (Canada)

b U S DEPARTMENT OF ENERGY (United States)

c INTEL CORPORATION (United States)

Author keywords

CMP; Passive film; Potassium ferricyanide slurry; Removal rate

Indexed keywords

CORROSION; ELECTRONIC EQUIPMENT; MICROELECTRONICS; PH EFFECTS; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SLURRIES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL-MECHANICAL PLANARIZATION (CMP); ELECTRONIC DEVICES; MULTILEVEL INTERCONNECTIONS; REMOVAL RATE;

WEAR OF MATERIALS;

PASSIVE FILM; TUNGSTEN; WEAR;

EID: 19944367305 PISSN: 00431648 EISSN: None Source Type: Journal
DOI: 10.1016/j.wear.2005.02.018 Document Type: Article

Times cited : (12)

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