Oxide-chemical mechanical polishing characteristics using silica slurry retreated by mixing of original and used slurry

Microelectronic Engineering

Volumn 77, Issue 3-4, 2005, Pages 263-269

  Seo, Yong Jin ^a  

^a Daebul University   (South Korea)

Author keywords

Chemical mechanical polishing; Cost of consumables; Cost of ownership; Removal rate; Within wafer non uniformity

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MIXING; PH EFFECTS; POWDERS; SILICA; SLURRIES; SURFACE ACTIVE AGENTS; SURFACE ROUGHNESS; THIN FILMS; ULSI CIRCUITS;

COST OF CONSUMABLES; COST OF OWNERSHIP; REMOVAL RATE; WITHIN-WAFER NON-UNIFORMITY;

CHEMICAL MECHANICAL POLISHING;

EID: 15344350418     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.11.015     Document Type: Article

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