Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing

Applied Surface Science

Volumn 257, Issue 14, 2011, Pages 6163-6170

  Coetsier, C M ^a   Testa, F ^a,b   Carretier, E ^a   Ennahali, M ^b   Laborie, B ^b   Mouton Arnaud, C ^c   Fluchere, O ^c   Moulin, P ^a  

^a AIX MARSEILLE UNIVERSITY   (France)

^b KEMESYS   (France)

^c STMICROELECTRONICS   (France)

Author keywords

Chemical additives; CMP; Material removal; Reused slurry; Tungsten film

Indexed keywords

ABRASIVES; CATALYSTS; IRON COMPOUNDS; PH EFFECTS; POLISHING; SILICA; TUNGSTEN COMPOUNDS;

CHEMICAL ADDITIVE; CHEMICAL COMPOSITIONS; CHEMICAL MECHANISM; CHEMICAL-MECHANICAL POLISHING PROCESS; MATERIAL REMOVAL; MULTILEVEL INTERCONNECTION; OXIDATION MECHANISMS; TUNGSTEN FILMS;

CHEMICAL MECHANICAL POLISHING;

EID: 79953027706     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.02.023     Document Type: Article

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