SCOPUS 정보 검색 플랫폼

Volumn 370, Issue , 2013, Pages 336-341

Site-controlled growth of indium nitride based nanostructures using metalorganic vapour phase epitaxy

(8) Winden, Andreas a,b Mikulics, Martin a,b Stoica, Toma a,b Von Der Ahe, Martina a,b Mussler, Gregor a,b Haab, Anna a,b Gruẗzmacher, Detlev a,b Hardtdegen, Hilde a,b

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b JARA Fundamentals of Future Information Technology (Germany)

Author keywords

A1. Crystal morphology; A1. Nanostructures; A1. Photoluminescence; A3. Metalorganic vapour phase epitaxy; A3. Selective epitaxy; B1. Indium nitride

Indexed keywords

EPITAXIAL GROWTH; INDIUM; NITRIDES; NUCLEATION; SUBSTRATES; VAPOR PHASE EPITAXY;

CRYSTAL MORPHOLOGIES; INDIUM NITRIDE; METAL-ORGANIC VAPOUR PHASE EPITAXY; NANOSTRUCTURE MORPHOLOGIES; NEAR-BAND EDGE LUMINESCENCE; OPTICAL CHARACTERISTICS; SELECTIVE AREA GROWTH; SELECTIVE EPITAXY;

NANOSTRUCTURES;

EID: 84883163247 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.08.034 Document Type: Article

Times cited : (19)

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