Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

Nanotechnology

Volumn 22, Issue 6, 2011, Pages

  Skiba Szymanska, Joanna ^a   Jamil, Ayesha ^b   Farrer, Ian ^b   Ward, Martin B ^a   Nicoll, Christine A ^b   Ellis, David J P ^a   Griffiths, Jonathan P ^b   Anderson, David ^b   Jones, Geb A C ^b   Ritchie, David A ^b   Shields, Andrew J ^a  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DOT EMISSIONS; EMISSION LINEWIDTH; EMISSION WAVELENGTH; EXCITONIC TRANSITION; FINE STRUCTURE SPLITTING; FLUCTUATING CHARGE; GAAS(1 0 0); INAS QUANTUM DOTS; NONRESONANT; OPTICAL EXCITATIONS; PHOTOLUMINESCENCE MEASUREMENTS; POWER DEPENDENCE; RE-GROWTH; SELF-ASSEMBLED; SINGLE LAYER;

CLEANING; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHOTOEXCITATION; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79251567964     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/6/065302     Document Type: Article

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