Morphology evolution and optical properties of GaN nano-pyramids grown by selective area MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 624-627

  Winden, Andreas ^a,b   Mikulics, Martin ^a,b   Haab, Anna ^a,b   Stoica, Toma ^a,b   von der Ahe, Martina ^a,b   Wirtz, Konrad ^a,b   Hardtdegen, Hilde ^a,b   Grützmacher, Detlev ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Julich Aachen Research Alliance JARA   (Germany)

Author keywords

GaN; Micro photoluminescence; MOVPE; Nano pyramids; Selective area growth; Strain

Indexed keywords

BAND EDGE TRANSITION; FILL FACTOR; GAN; GAN LAYERS; GROWTH TIME; INTER-HOLE SPACING; MASK OPENING; MICROPHOTOLUMINESCENCE; MICROPHOTOLUMINESCENCE SPECTROSCOPY; MORPHOLOGY EVOLUTION; NANO-PYRAMIDS; OPTICAL NANOSTRUCTURES; RED SHIFT; ROOM TEMPERATURE; SAPPHIRE TEMPLATES; SCANNING ELECTRON MICROSCOPIES (SEM); SELECTIVE AREA GROWTH; SELECTIVE AREAS; SUB-100 NM;

METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; STRAIN;

GALLIUM NITRIDE;

EID: 84858808356     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100411     Document Type: Article

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