Investigation on the retention reliability of scaled SiO 2/AlxOy/SiO2 inter-poly dielectrics for nand flash cell arrays

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 266-268

  Lee, Se Hoon ^a   Park, Mincheol ^a   Choi, Byung Yong ^a   Sung, Suk Kang ^a   Kim, Tae Hun ^a   Ju, Byongsun ^a   Kim, Dong Chan ^a   Lee, Choong Ho ^a   Kim, Keonsoo ^a   Choi, Jungdal ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

High dielectric; Inter poly dielectric (IPD); Nand Flash memory; Retention reliability

Indexed keywords

DATA RETENTION; ENERGY LEVEL; HIGH TEMPERATURE; INTER-POLY DIELECTRIC (IPD); INTERPOLY DIELECTRICS; NAND FLASH; NAND FLASH MEMORY; TRAP ASSISTED TUNNELING; TRAP SITES; TRAPPING RATE;

DIELECTRIC MATERIALS; NAND CIRCUITS; RELIABILITY; SILICON COMPOUNDS;

FLASH MEMORY;

EID: 77950088673     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2039985     Document Type: Article

References (11)

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