Investigation of resistive switching properties in Sm 2O 3 memory devices

2011 11th Annual Non-Volatile Memory Technology Symposium, NVMTS 2011

Volumn , Issue , 2011, Pages 100-102

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a   Chen, Min Chen ^a   Sze, Simon M ^a   Tsai, Ming Jinn ^b  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

nonvolatile memory; resistance switching; RRAM; Sm 2O 3 thin film

Indexed keywords

CMOS DEVICES; CMOS PROCESSS; ENDURANCE TEST; HIGH-K MATERIALS; NON-VOLATILE MEMORIES; ORGANICS; PEROVSKITE OXIDES; RARE EARTH OXIDE; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS; RRAM; SAMARIUM OXIDES; TRANSITION-METAL OXIDES;

CMOS INTEGRATED CIRCUITS; PEROVSKITE; RANDOM ACCESS STORAGE; SILICON COMPOUNDS; THIN FILMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

MATERIALS;

EID: 84863131261     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMTS.2011.6137094     Document Type: Conference Paper

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