Optimizing amorphous indium zinc oxide film growth for low residual stress and high electrical conductivity

Applied Surface Science

Volumn 283, Issue , 2013, Pages 65-73

  Kumar, Mukesh ^a   Sigdel, A K ^b,c   Gennett, T ^c   Berry, J J ^c   Perkins, J D ^c   Ginley, D S ^c   Packard, C E ^a,c  

^a Department of Metallurgical and Materials Engineering   (United States)

^b UNIVERSITY OF DENVER   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Amorphous indium zinc oxide; Design of experiment; Flexible TCO's; Residual stress; Transparent conducting oxide

Indexed keywords

AMORPHOUS FILMS; ANALYSIS OF VARIANCE (ANOVA); CONDUCTIVE FILMS; DEPOSITION; DESIGN OF EXPERIMENTS; ELECTRIC CONDUCTIVITY; FLEXIBLE ELECTRONICS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; OXYGEN; PARTIAL PRESSURE; REGRESSION ANALYSIS; RESIDUAL STRESSES; THIN FILMS; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); COMPRESSIVE RESIDUAL STRESS; FLEXIBLE TCO'S; HIGH ELECTRICAL CONDUCTIVITY; INDIUM ZINC OXIDES; OPTOELECTRONIC PROPERTIES; REGRESSION MODELING AND ANALYSIS; STATISTICAL DESIGN OF EXPERIMENTS;

FILM GROWTH;

EID: 84883141227     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.06.019     Document Type: Article

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