Transparent, low resistance, and flexible amorphous ZnO-doped In 2O3 Anode Grown on a PES Substrate

Journal of the Electrochemical Society

Volumn 154, Issue 3, 2007, Pages

  Bae, Jung Hyeok ^a   Moon, Jong Min ^a   Kang, Jae Wook ^b   Park, Hyung Dol ^b   Kim, Jang Joo ^b   Jo Cho, Woon ^c   Kim, Han Ki ^a  

^a Kumoh National Institute of Technology   (South Korea)

^b Seoul National University   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); FILM GROWTH; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; POLYETHERS; SPUTTERING; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

AMORPHOUS STRUCTURES; ANODE FILMS; ORGANIC LIGHT-EMITTING DIODES; SUBSTRATE TEMPERATURE;

ANODES;

EID: 33846947603     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2426800     Document Type: Article

References (23)

1. Gregory P. Crawford, Flexible Flat Panel Displays, 1st ed., John Wiley & Sons, London (2005).
2. H. Lim, W.-J. Cho, C.-S. Ha, S. Ando, Y.-K. Kim, C.-H. Park, and K. Lee, Adv. Mater. (Weinheim, Ger.), 14, 1275 (2002).
3. K. Tsukagoshi, J. Tanabe, I. Yagi, K. Shigeto, K. Yanagisawa, and Y. Aoyagi, J. Appl. Phys., 99, 064506 (2006).
4. L. S. Hung and C. H. Chen, Mater. Sci. Eng., R., 39, 143 (2002).
5. J. Lewis, S. Grego, B. Chalamala, E. Vick, and D. Temple, Appl. Phys. Lett., 85, 3450 (2004).
6. H. Han, D. Adams, J. W. Mayer, and T. L. Alford, J. Appl. Phys., 98, 083705 (2005).
7. J. Cui, A. Wang, N. L. Edleman, J. Ni, P. Lee, N. R. Armstrong, and T. Marks, Adv. Mater. (Weinheim, Ger.), 13, 1476 (2001).
8. A. R. Schlatmann, D. W. Floet, A. Hillberer, F. Garten, P. J. M. Smulders, T. M. Klapwijk, and G. Hadziioannou, Appl. Phys. Lett., 69, 1764 (1996).
9. Y. Park, V. Choong, Y. Gao, B. R. Hsieh, and C. W. Tang, Appl. Phys. Lett., 68, 2699 (1996).
10. J. M. Philips, J. Kwo, G. A. Thomas, S. A. Carter, R. J. Cava, S. Y. Hou, J. J. Krajewski, J. H. Marshall, W. F. Peck, D. H. Rapkine, and R. B. V. Dover, Appl. Phys. Lett., 65, 115 (1994).
11. Y. Shigesato, D. C. Paine, and T. E. Haynes, Adv. Mater. (Weinheim, Ger.), 4, 503 (1994).
12. T. Minami, H. Sonohara, T. Kakumu, and S. Takata, Jpn. J. Appl. Phys., Part 1, 34, 971 (1995).
13. T. Minami, T. Kakumu, and S. Takata, J. Vac. Sci. Technol. A, 14, 1704 (1996).
14. H. Hara, T. Hanada, T. Shiro, and T. Yatabe, J. Vac. Sci. Technol. A, 22, 1726 (2004).
15. A. Sugimoto, H. Ochi, S. Fujimura, A. Yoshida, T. Miyadera, and M. Tsuchida, IEEE J. Sel. Top. Quantum Electron., 10, 107 (2004).
16. C. Marcel, N. Naghavi, G. Couturier, J. Salardenne, and J. M. Tarascon, J. Appl. Phys., 91, 4291 (2002).
17. J.-J. Ho and C.-Y. Chen, J. Electrochem. Soc., 152, G57 (2005).
18. H.-C. Pan, M.-H. Shiao, C.-Y. Su, and C.-N. Hsiao, J. Vac. Sci. Technol. A, 23, 1187 (2005).
19. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, Thin Solid Films, 445, 63 (2003).
20. Y. Shigesato, S. Takaki, and T. Haranoh, J. Appl. Phys., 71, 3356 (1992).
21. T. Oyama, J. Vac. Sci. Technol. A, 10, 1682 (1992).
22. J. C. C. Fan and J. B. Goodenough, J. Appl. Phys., 48, 3524 (1977).
23. D. K. Schroder, Semiconductor Material and Device Characterization, 2nd ed., John Wiley & Sons, New York (1998).