Effects of energetic ion bombardment on structural and electrical properties of Al-doped ZnO films deposited by RF-superimposed DC magnetron sputtering

Japanese Journal of Applied Physics

Volumn 49, Issue 7 PART 1, 2010, Pages 0711031-0711035

  Ito, Norihiro ^a,b   Oka, Nobuto ^a   Sato, Yasusi ^a   Shigesato, Yuzo ^a  

^a AOYAMA GAKUIN UNIVERSITY   (Japan)

^b PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AZO FILMS; BOMBARDMENT ENERGY; CATHODE VOLTAGES; DC MAGNETRON SPUTTERING; DC SPUTTERING; ENERGETIC ION; GROWING FILMS; HIGH ENERGY; IONS IMPINGING; MAGNETRON SPUTTER DEPOSITION; NEGATIVE OXYGEN IONS; PLASMA IMPEDANCE; RF-POWER; STRUCTURAL AND ELECTRICAL PROPERTIES; TARGET SURFACE; ZNO;

ALUMINUM; DC POWER TRANSMISSION; ELECTRIC PROPERTIES; FILM GROWTH; MAGNETRON SPUTTERING; NEGATIVE IONS; OPTICAL FILMS; OXYGEN; ZINC OXIDE;

ION BOMBARDMENT;

EID: 77956546429     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.071103     Document Type: Article

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