Electrical and structural properties of In-doped ZnO films deposited by RF superimposed DC magnetron sputtering system

Journal of Physics and Chemistry of Solids

Volumn 71, Issue 4, 2010, Pages 669-672

  Park, Ji Bong ^a   Park, Se Hun ^a   Song, Pung Keun ^a  

^a Pusan National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BURSTEIN-MOSS SHIFT; CARRIER DENSITY; DC MAGNETRON SPUTTERING; DC MAGNETRON SPUTTERING SYSTEMS; DOPED ZNO; ELECTRICAL AND STRUCTURAL PROPERTIES; GLASS SUBSTRATES; GRAIN SIZE; HIGH-DENSITY; LOW DAMAGES; RF DISCHARGE; RF-POWER; ROOM TEMPERATURE; SPUTTERING PARAMETERS; SPUTTERING POWER; STRUCTURAL AND OPTICAL PROPERTIES; TOTAL POWER; VISIBLE LIGHT REGION; XPS; ZNO;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; INDIUM; MAGNETRONS; OPTICAL PROPERTIES; SINTERING; SUBSTRATES; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77949570842     PISSN: 00223697     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jpcs.2009.12.062     Document Type: Article

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