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Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 19, Issue 5, 2001, Pages 2043-2047

Effect of film density on electrical properties of indium tin oxide films deposited by dc magnetron reactive sputtering

(2) Choi, S K a Lee, J I a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON SCATTERING; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; PARTIAL PRESSURE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; SPUTTER DEPOSITION;

FILM DENSITY; TIN-DOPED INDIUM OXIDE (ITO) FILMS;

SEMICONDUCTING FILMS;

EID: 0035441652 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.1371326 Document Type: Article

Times cited : (85)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.