Impact-ionization-based resistive transition model for thin TiO2 films

Journal of Applied Physics

Volumn 114, Issue 4, 2013, Pages

  Omura, Yasuhisa ^a   Kondo, Yusuke ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE FILAMENTS; IONIZATION PROCESS; IV CHARACTERISTICS; REACTION ENERGY; RESISTIVE TRANSITION; TIO; VOLTAGE RISE;

FILM THICKNESS; IMPACT IONIZATION;

TITANIUM DIOXIDE;

EID: 84882446472     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4816688     Document Type: Article

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