Influence of in-situ annealing ambient on p-type conduction in dual ion beam sputtered Sb-doped ZnO thin films

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Pandey, Sushil Kumar ^a   Kumar Pandey, Saurabh ^a   Awasthi, Vishnu ^a   Gupta, M ^b   Deshpande, U P ^b   Mukherjee, Shaibal ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY INDORE   (India)

^b University Grant Commission Department of Atomic Energy Consortium for Scientific Research   (India)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; COMPLEX FORMATIONS; DUAL ION BEAM; DUAL ION BEAM SPUTTERING; HALL MEASUREMENTS; IN-SITU ANNEALING; P-TYPE CONDUCTION; X-RAY PHOTOELECTRONS;

SPECTROSCOPIC ANALYSIS; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

ANNEALING;

EID: 84882357982     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818819     Document Type: Article

References (30)

1. S. K. Pandey, S. K. Pandey, C. Mukherjee, P. Mishra, M. Gupta, S. R. Barman, S. W. D'Souza, and S. Mukherjee, J. Mater. Sci.: Mater. Electron. 24, 2541 (2013). 10.1007/s10854-013-1130-5
2. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B 22, 932 (2004). 10.1116/1.1714985
3. S. J. Pearton, C. R. Abernathy, M. E. Overberg, G. T. Thaler, and D. P. Norton, J. Appl. Phys. 93, 1 (2003). 10.1063/1.1517164
4. D. C. Look, D. C. Reynolds, J. R. Sizelove, R. L. Jones, C. W. Litton, G. Cantwell, and W. C. Harsch, Solid State Commun. 105, 399 (1998). 10.1016/S0038-1098(97)10145-4
5. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000). 10.1103/PhysRevLett.85.1012
6. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christen, A. Hoffmann, M. Stra burg, M. Dworzak, U. Haboeck, and A. V. Rodina, Phys. Status Solidi B 241, 231 (2004). 10.1002/pssb.200301962
7. X. L. Guo, H. Tabata, and T. Kawai, J. Cryst. Growth 223, 135 (2001). 10.1016/S0022-0248(00)00952-0
8. J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003). 10.1063/1.1592621
9. D. C. Look, G. M. Renlund, R. H. Burgener, and J. R. Sizelove, Appl. Phys. Lett. 85, 5269 (2004). 10.1063/1.1825615
10. K. K. Kim, H. S. Kim, D. K. Hwang, J. H. Lim, and S. J. Park, Appl. Phys. Lett. 83, 63 (2003). 10.1063/1.1591064
11. Y. J. Zeng, Z. Z. Ye, W. Z. Xu, D. Y. Li, J. G. Lu, L. P. Zhu, and B. H. Zhao, Appl. Phys. Lett. 88, 062107 (2006). 10.1063/1.2172743
12. B. Y. Zhang, B. Yao, Y. F. Li, Z. Z. Zhang, B. H. Li, C. X. Shan, D. X. Zhao, and D. Z. Shen, Appl. Phys. Lett. 97, 222101 (2010). 10.1063/1.3518059
13. J. G. Lu, Y. Z. Zhang, Z. Z. Ye, L. P. Zhu, L. Wang, B. H. Zhao, and Q. L. Liang, Appl. Phys. Lett. 88, 222114 (2006). 10.1063/1.2209191
14. S. Limpijumnong, S. B. Zhang, S. H. Wei, and C. H. Park, Phys. Rev. Lett. 92, 155504 (2004). 10.1103/PhysRevLett.92.155504
15. F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, J. L. Liu, and W. P. Beyermann, Appl. Phys. Lett. 87, 152101 (2005). 10.1063/1.2089183
16. W. Guo, A. Allenic, Y. B. Chen, X. Q. Pan, Y. Che, Y. Che, Z. D. Hu, and B. Liu, Appl. Phys. Lett. 90, 242108 (2007). 10.1063/1.2747669
17. P. Wanga, N. Chena, Z. Yina, F. Yanga, and C. Penga, J. Cryst. Growth 290, 56-60 (2006). 10.1016/j.jcrysgro.2006.01.022
18. B. L. Zhu, C. S. Xie, D. W. Zeng, W. L. Song, and A. H. Wang, Mater. Chem. Phys. 89, 148-153 (2005). 10.1016/j.matchemphys.2004.08.028
19. B. Lin, Z. Fu, and Y. Jia, Appl. Phys. Lett. 79, 943 (2001). 10.1063/1.1394173
20. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000). 10.1103/PhysRevB.61.15019
21. S. B. Zhang, S.-H. Wei, and A. Zunger, Phys. Rev. B 63, 075205 (2001). 10.1103/PhysRevB.63.075205
22. W. Z. Xu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, B. H. Zhao, L. Jiang, J. G. Lu, and H. P. He, Appl. Phys. Lett. 88, 173506 (2006). 10.1063/1.2199588
23. S. Jang, J.-J. Chen, B. S. Kang, F. Ren, D. P. Norton, S. J. Pearton, J. Lopata, and W. S. Hobson, Appl. Phys. Lett. 87, 222113 (2005). 10.1063/1.2137988
24. F. Zhuge, L. P. Zhu, Z. Z. Ye, D. W. Ma, J. G. Lu, J. Y. Huang, F. Z. Wang, Z. G. Ji, and S. B. Zhang, Appl. Phys. Lett. 87, 092103 (2005). 10.1063/1.2012521
25. P. Wang, N. Chen, Z. Yin, R. Dai, and Y. Bai, Appl. Phys. Lett. 89, 202102 (2006). 10.1063/1.2388254
26. A. Barbaro, S. Larrondo, S. Duhalde, and N. Amadeo, Appl. Catal., A 193, 277-283 (2000). 10.1016/S0926-860X(99)00445-7
27. D. Szczuko, J. Werner, and S. Oswald, Appl. Surf. Sci. 179, 301-306 (2001). 10.1016/S0169-4332(01)00298-7
28. A. Janotti and C. G. Van de Walle, Rep. Prog. Phys. 72, 126501 (2009). 10.1088/0034-4885/72/12/126501
29. D. W. Zeng, C. S. Xie, B. L. Zhu, W. L. Song, and A. H. Wang, Mater. Sci. Eng. B 104, 68-72 (2003). 10.1016/S0921-5107(03)00314-3
30. X. Pan, Z. Ye, J. Li, X. Gu, Y. Zeng, H. He, L. Zhu, and Y. Che, Appl. Surf. Sci. 253, 5067-5069 (2007). 10.1016/j.apsusc.2006.11.014