SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 103, Issue 6, 2013, Pages

Low voltage resistive switching devices based on chemically produced silicon oxide

(3) Li, Can a Jiang, Hao a Xia, Qiangfei a

a University of Massachusetts (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE METALS; CONDUCTION MODELS; FILAMENT FORMATION; PIRANHA SOLUTIONS; PROGRAMMING VOLTAGE; RESISTIVE SWITCHING BEHAVIORS; RESISTIVE SWITCHING DEVICES; SWITCHING MECHANISM;

BEHAVIORAL RESEARCH; ELECTRODES; METALS; SILICON; SWITCHING SYSTEMS;

SILICON OXIDES;

EID: 84881638223 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4817970 Document Type: Article

Times cited : (34)

References (34)

1
- 0015127532
- 10.1109/TCT.1971.1083337
- L. O. Chua, IEEE Trans. Circuit Theory 18, 507 (1971). 10.1109/TCT.1971.1083337
- (1971) IEEE Trans. Circuit Theory , vol.18 , pp. 507
- Chua, L.O.¹

2
- 43049126833
- 10.1038/nature06932
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932
- (2008) Nature , vol.453 , pp. 80
- Strukov, D.B.¹ Snider, G.S.² Stewart, D.R.³ Williams, R.S.⁴

3
- 84861185379
- 10.1109/JPROC.2012.2190814
- L. Chua, Proc. IEEE 100, 1920 (2012). 10.1109/JPROC.2012.2190814
- (2012) Proc. IEEE , vol.100 , pp. 1920
- Chua, L.¹

4
- 84877754319
- 10.1038/ncomms2784
- I. Valov, E. Linn, S. Tappertzhofen, S. Schmelzer, J. van den Hurk, F. Lentz, and R. Waser, Nat. Commun. 4, 1771 (2013). 10.1038/ncomms2784
- (2013) Nat. Commun. , vol.4 , pp. 1771
- Valov, I.¹ Linn, E.² Tappertzhofen, S.³ Schmelzer, S.⁴ Van Den Hurk, J.⁵ Lentz, F.⁶ Waser, R.⁷

5
- 84878656616
- 10.1088/0957-4484/24/25/255201
- M. D. Ventra and Y. V. Pershin, Nanotechnology 24, 255201 (2013). 10.1088/0957-4484/24/25/255201
- (2013) Nanotechnology , vol.24 , pp. 255201
- Ventra, M.D.¹ Pershin, Y.V.²

6
- 35748974883
- 10.1038/nmat2023
- R. Waser and M. Aono, Nature Mater. 6, 833 (2007). 10.1038/nmat2023
- (2007) Nature Mater. , vol.6 , pp. 833
- Waser, R.¹ Aono, M.²

7
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittmann, R.² Staikov, G.³ Szot, K.⁴

8
- 84861125640
- 10.1109/JPROC.2012.2190812
- P. Mazumder, S. M. Kang, and R. Waser, Proc. IEEE 100, 1911 (2012). 10.1109/JPROC.2012.2190812
- (2012) Proc. IEEE , vol.100 , pp. 1911
- Mazumder, P.¹ Kang, S.M.² Waser, R.³

9
- 33748501587
- in, Washington, DC, 5-7 December 2005 (Institute of Electrical and Electronics Engineers, New York, 2005), 10.1109/IEDM.2005.1609462
- I. G. Baek, D. C. Kim, M. J. Lee, H. J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, J. C. Park, Y. K. Cha, S. O. Park, H. S. Kim, I. K. Yoo, U. In Chung, J. T. Moon, and B. I. Ryu, in IEEE International Electron Devices Meeting Technical Digest, Washington, DC, 5-7 December 2005 (Institute of Electrical and Electronics Engineers, New York, 2005), pp. 750-753. 10.1109/IEDM.2005.1609462
- IEEE International Electron Devices Meeting Technical Digest , pp. 750-753
- Baek, I.G.¹ Kim, D.C.² Lee, M.J.³ Kim, H.J.⁴ Yim, E.K.⁵ Lee, M.S.⁶ Lee, J.E.⁷ Ahn, S.E.⁸ Seo, S.⁹ Lee, J.H.¹⁰ Park, J.C.¹¹ Cha, Y.K.¹² Park, S.O.¹³ Kim, H.S.¹⁴ Yoo, I.K.¹⁵ In Chung, U.¹⁶ Moon, J.T.¹⁷ Ryu, B.I.¹⁸

10
- 72849144796
- 10.1021/nl901874j
- Q. Xia, W. Robinett, M. W. Cumbie, N. Banerjee, T. J. Cardinali, J. J. Yang, W. Wu, X. Li, W. M. Tong, D. B. Strukov, G. S. Snider, G. Medeiros-Ribeiro, and R. S. Williams, Nano Lett. 9, 3640 (2009). 10.1021/nl901874j
- (2009) Nano Lett. , vol.9 , pp. 3640
- Xia, Q.¹ Robinett, W.² Cumbie, M.W.³ Banerjee, N.⁴ Cardinali, T.J.⁵ Yang, J.J.⁶ Wu, W.⁷ Li, X.⁸ Tong, W.M.⁹ Strukov, D.B.¹⁰ Snider, G.S.¹¹ Medeiros-Ribeiro, G.¹² Williams, R.S.¹³

11
- 77950852717
- 10.1038/nature08940
- J. Borghetti, G. S. Snider, P. J. Kuekes, J. J. Yang, D. R. Stewart, and R. S. Williams, Nature 464, 873 (2010). 10.1038/nature08940
- (2010) Nature , vol.464 , pp. 873
- Borghetti, J.¹ Snider, G.S.² Kuekes, P.J.³ Yang, J.J.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

12
- 80054991874
- 10.1063/1.3640806
- S. Ha and S. Ramanathan, J. Appl. Phys. 110, 071101 (2011). 10.1063/1.3640806
- (2011) J. Appl. Phys. , vol.110 , pp. 071101
- Ha, S.¹ Ramanathan, S.²

13
- 46749093701
- 10.1038/nnano.2008.160
- J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 3, 429 (2008). 10.1038/nnano.2008.160
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

14
- 84963291371
- 10.1049/ree.1967.0069
- J. G. Simmons and R. R. Verderber, Radio Electron. Eng. 34, 81 (1967). 10.1049/ree.1967.0069
- (1967) Radio Electron. Eng. , vol.34 , pp. 81
- Simmons, J.G.¹ Verderber, R.R.²

15
- 0022240663
- 10.1016/0022-3093(85)90912-3
- P. Lecomber, A. Owen, W. Spear, W. E. Spear, J. Hajto, A. Snell, W. K. Choi, M. J. Rose, and S. Reynolds, J. Non-Cryst. Solids 77-78, 1373 (1985). 10.1016/0022-3093(85)90912-3
- (1985) J. Non-Cryst. Solids , vol.7778 , pp. 1373
- Lecomber, P.¹ Owen, A.² Spear, W.³ Spear, W.E.⁴ Hajto, J.⁵ Snell, A.⁶ Choi, W.K.⁷ Rose, M.J.⁸ Reynolds, S.⁹

16
- 0033640379
- 10.1016/S0038-1101(99)00182-3
- A. Avila and R. Asomoza, Solid-State Electron. 44, 17 (2000). 10.1016/S0038-1101(99)00182-3
- (2000) Solid-State Electron. , vol.44 , pp. 17
- Avila, A.¹ Asomoza, R.²

17
- 0038485855
- 10.1016/S0040-6090(03)00117-2
- J. Hu, H. Branz, R. Crandall, S. Ward, and Q. Wang, Thin Solid Films 430, 249 (2003). 10.1016/S0040-6090(03)00117-2
- (2003) Thin Solid Films , vol.430 , pp. 249
- Hu, J.¹ Branz, H.² Crandall, R.³ Ward, S.⁴ Wang, Q.⁵

18
- 63649138779
- 10.1021/nl8037689
- S. Jo, K. Kim, and W. Lu, Nano Lett. 9, 870 (2009). 10.1021/nl8037689
- (2009) Nano Lett. , vol.9 , pp. 870
- Jo, S.¹ Kim, K.² Lu, W.³

19
- 77958042599
- 10.1021/nl102255r
- J. Yao, Z. Zhang, L. Zhong, D. Natelson, and J. Tour, Nano Lett. 10, 4105 (2010). 10.1021/nl102255r
- (2010) Nano Lett. , vol.10 , pp. 4105
- Yao, J.¹ Zhang, Z.² Zhong, L.³ Natelson, D.⁴ Tour, J.⁵

20
- 79851493079
- 10.1021/ja108277r
- J. Yao, L. Zhong, D. Natelson, and J. Tour, J. Am. Chem. Soc. 133, 941 (2011). 10.1021/ja108277r
- (2011) J. Am. Chem. Soc. , vol.133 , pp. 941
- Yao, J.¹ Zhong, L.² Natelson, D.³ Tour, J.⁴

21
- 79959370163
- 10.1007/s00339-011-6267-6
- J. Yao, L. Zhong, D. Natelson, and J. Tour, Appl. Phys. A 102, 835 (2011). 10.1007/s00339-011-6267-6
- (2011) Appl. Phys. A , vol.102 , pp. 835
- Yao, J.¹ Zhong, L.² Natelson, D.³ Tour, J.⁴

22
- 84869435368
- 10.1038/ncomms2110
- J. Yao, J. Lin, Y. Dai, G. Ruan, Z. Yan, L. Li, L. Zhong, D. Natelson, and J. Tour, Nat. Commun. 3, 1101 (2012). 10.1038/ncomms2110
- (2012) Nat. Commun. , vol.3 , pp. 1101
- Yao, J.¹ Lin, J.² Dai, Y.³ Ruan, G.⁴ Yan, Z.⁵ Li, L.⁶ Zhong, L.⁷ Natelson, D.⁸ Tour, J.⁹

23
- 84879853293
- 10.1063/1.4769218
- Y.-F. Chang, P.-Y. Chen, B. Fowler, Y.-T. Chen, F. Xue, Y. Wang, F. Zhou, and J. Lee, J. Appl. Phys. 112, 123702 (2012). 10.1063/1.4769218
- (2012) J. Appl. Phys. , vol.112 , pp. 123702
- Chang, Y.-F.¹ Chen, P.-Y.² Fowler, B.³ Chen, Y.-T.⁴ Xue, F.⁵ Wang, Y.⁶ Zhou, F.⁷ Lee, J.⁸

24
- 84867830114
- 10.1088/0957-4484/23/45/455201
- A. Mehonic, S. Cueff, M. Wojdak, S. Hudziak, C. Labbe, R. Rizk, and A. Kenyon, Nanotechnology 23, 455201 (2012). 10.1088/0957-4484/23/45/455201
- (2012) Nanotechnology , vol.23 , pp. 455201
- Mehonic, A.¹ Cueff, S.² Wojdak, M.³ Hudziak, S.⁴ Labbe, C.⁵ Rizk, R.⁶ Kenyon, A.⁷

25
- 84861719498
- 10.1063/1.3701581
- A. Mehonic, S. Cueff, M. Wojdak, S. Hudziak, O. Jambois, C. Labbe, B. Garrido, R. Rizk, and A. J. Kenyon, J. Appl. Phys. 111, 074507 (2012). 10.1063/1.3701581
- (2012) J. Appl. Phys. , vol.111 , pp. 074507
- Mehonic, A.¹ Cueff, S.² Wojdak, M.³ Hudziak, S.⁴ Jambois, O.⁵ Labbe, C.⁶ Garrido, B.⁷ Rizk, R.⁸ Kenyon, A.J.⁹

26
- 0017723739
- 10.1109/TNS.1977.4329175
- F. Grunthaner and J. Maserjian, IEEE Trans. Nucl. Sci. 24, 2108 (1977). 10.1109/TNS.1977.4329175
- (1977) IEEE Trans. Nucl. Sci. , vol.24 , pp. 2108
- Grunthaner, F.¹ Maserjian, J.²

27
- 0347024499
- 10.1016/0169-4332(92)90347-Z
- H. Ogawa, N. Terada, K. Sugiyanma, K. Moriki, N. Miyata, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Appl. Surf. Sci. 56-58, 836 (1992). 10.1016/0169-4332(92)90347-Z
- (1992) Appl. Surf. Sci. , vol.5658 , pp. 836
- Ogawa, H.¹ Terada, N.² Sugiyanma, K.³ Moriki, K.⁴ Miyata, N.⁵ Aoyama, T.⁶ Sugino, R.⁷ Ito, T.⁸ Hattori, T.⁹

28
- 0242717295
- 10.1143/JJAP.29.L2401
- K. Sugiyama, T. Igarashi, K. Moriki, V. Nagasawa, T. Aoyama, R. Sugino, T. Ito, and T. Hattori, Jpn. J. Appl. Phys., Part 2 29, L2401 (1990). 10.1143/JJAP.29.L2401
- (1990) Jpn. J. Appl. Phys., Part 2 , vol.29 , pp. 2401
- Sugiyama, K.¹ Igarashi, T.² Moriki, K.³ Nagasawa, V.⁴ Aoyama, T.⁵ Sugino, R.⁶ Ito, T.⁷ Hattori, T.⁸

29
- 84881641521
- available at.
- K. Komiya and Y. Omura, J. Semicond. Technol. Sci. 2, 164 (2002), available at: http://www.jsts.org/html/journal/journal-files/2002/9/2002-Vol2- No3-164.pdf.
- (2002) J. Semicond. Technol. Sci. , vol.2 , pp. 164
- Komiya, K.¹ Omura, Y.²

30
- 35148849058
- 10.1109/TED.2007.904402
- C. Schindler, S. C. P. Thermadam, R. Waser, and M. N. Kozicki, IEEE Trans. Electron Devices 54, 2762 (2007). 10.1109/TED.2007.904402
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2762
- Schindler, C.¹ Thermadam, S.C.P.² Waser, R.³ Kozicki, M.N.⁴

31
- 60749127336
- 10.1063/1.3077310
- C. Schindler, G. Staikov, and R. Waser, Appl. Phys. Lett. 94, 072109 (2009). 10.1063/1.3077310
- (2009) Appl. Phys. Lett. , vol.94 , pp. 072109
- Schindler, C.¹ Staikov, G.² Waser, R.³

32
- 84860750295
- 10.1039/c2nr30413a
- S. Tappertzhofen, H. Mundelein, I. Valov, and R. Waser, Nanoscale 4, 3040 (2012). 10.1039/c2nr30413a
- (2012) Nanoscale , vol.4 , pp. 3040
- Tappertzhofen, S.¹ Mundelein, H.² Valov, I.³ Waser, R.⁴

33
- 80052154799
- 10.1002/adma.201102132
- B. J. Choi, A. B. K. Chen, X. Yang, and I.-W. Chen, Adv. Mater. 23, 3847 (2011). 10.1002/adma.201102132
- (2011) Adv. Mater. , vol.23 , pp. 3847
- Choi, B.J.¹ Chen, A.B.K.² Yang, X.³ Chen, I.-W.⁴

34
- 0004005306
- 3rd ed. (Wiley, Hoboken).
- S. Sze and K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, Hoboken, 2006) p. 49.
- (2006) Physics of Semiconductor Devices , pp. 49
- Sze, S.¹ Ng, K.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.