Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy

Applied Physics Letters

Volumn 68, Issue 17, 1996, Pages 2392-2394

  Huang, J W ^a   Kuech, T F ^a   Lu, Hongqiang ^b   Bhat, Ishwara ^b  

^a University of Wisconsin Madison   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544440405     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116144     Document Type: Article

References (15)

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