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Volumn 133, Issue 2-3, 2012, Pages 1029-1033

Effects of growth conditions on the acceptor activation of Mg-doped p-GaN

Author keywords

Electrical properties; MOCVD; Optical properties; Thin films

Indexed keywords

ACCEPTOR ACTIVATION; ACTIVATION EFFICIENCY; COMPENSATION EFFECTS; COMPENSATION RATIO; GROWTH CONDITIONS; LOW-PRESSURE GROWTH; METAL-ORGANIC; MG-DOPED; P-GAN FILMS; REACTOR PRESSURES; SAPPHIRE SUBSTRATES; VARIABLE TEMPERATURE;

EID: 84862782030     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.01.128     Document Type: Article
Times cited : (28)

References (31)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.