SCOPUS 정보 검색 플랫폼

Physical Review Letters

Volumn 108, Issue 15, 2012, Pages

Shallow versus deep nature of Mg acceptors in nitride semiconductors

(3) Lyons, John L a Janotti, Anderson a Van De Walle, Chris G a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BLUE LUMINESCENCE; FUNCTIONAL CALCULATIONS; KEY FEATURE; LOCAL LATTICE DISTORTION; NITRIDE SEMICONDUCTORS; TRANSITION LEVEL; ULTRAVIOLET PHOTOLUMINESCENCE;

MAGNETIC RESONANCE; PARAMAGNETISM; PHOTOLUMINESCENCE;

GALLIUM NITRIDE;

EID: 84859836855 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.108.156403 Document Type: Article

Times cited : (260)

References (32)

1
- 66949170575
- PRLTAO 0031-9007 10.1103/PhysRevLett.102.235501
- B. Monemar, Phys. Rev. Lett. 102, 235501 (2009). PRLTAO 0031-9007 10.1103/PhysRevLett.102.235501
- (2009) Phys. Rev. Lett. , vol.102 , pp. 235501
- Monemar, B.¹

2
- 77951183880
- APPLAB 0003-6951 10.1063/1.3383236
- S. Lany and A. Zunger, Appl. Phys. Lett. 96, 142114 (2010). APPLAB 0003-6951 10.1063/1.3383236
- (2010) Appl. Phys. Lett. , vol.96 , pp. 142114
- Lany, S.¹ Zunger, A.²

3
- 0026819254
- JAPNDE 0021-4922 10.1143/JJAP.31.L139
- S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys. JAPNDE 0021-4922 31, L139 (1992). 10.1143/JJAP.31.L139
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 139
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

4
- 36449007384
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition
- DOI 10.1063/1.116503, PII S0003695196030057
- W. Götz, N.M. Johnson, J. Walker, D.P. Bour, and R.A. Street, Appl. Phys. Lett. 68, 667 (1996). APPLAB 0003-6951 10.1063/1.116503 (Pubitemid 126683924)
- (1996) Applied Physics Letters , vol.68 , Issue.5 , pp. 667-669
- Gotz, W.¹ Johnson, N.M.² Walker, J.³ Bour, D.P.⁴ Street, R.A.⁵

5
- 20644450567
- Luminescence properties of defects in GaN
- DOI 10.1063/1.1868059, 061301
- M.A. Reshchikov and H. Morkoç, J. Appl. Phys. 97, 061301 (2005). JAPIAU 0021-8979 10.1063/1.1868059 (Pubitemid 40833704)
- (2005) Journal of Applied Physics , vol.97 , Issue.6 , pp. 1-95
- Reshchikov, M.A.¹ Morko, H.²

6
- 0242580893
- APPLAB 0003-6951 10.1063/1.1619210
- O. Gelhausen, H.N. Klein, M.R. Phillips, and E.M. Goldys, Appl. Phys. Lett. 83, 3293 (2003). APPLAB 0003-6951 10.1063/1.1619210
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3293
- Gelhausen, O.¹ Klein, H.N.² Phillips, M.R.³ Goldys, E.M.⁴

7
- 0001272657
- APPLAB 0003-6951 10.1063/1.126562
- F. Shahedipour and B.W. Wessels, Appl. Phys. Lett. 76, 3011 (2000). APPLAB 0003-6951 10.1063/1.126562
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3011
- Shahedipour, F.¹ Wessels, B.W.²

8
- 0037198541
- Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)
- DOI 10.1016/S0921-5107(02)00007-7, PII S0921510702000077
- E.R. Glaser, Mater. Sci. Eng. B 93, 39 (2002). MSBTEK 0921-5107 10.1016/S0921-5107(02)00007-7 (Pubitemid 34448663)
- (2002) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.93 , Issue.1-3 , pp. 39-48
- Glaser, E.R.¹ Carlos, W.E.² Braga, G.C.B.³ Freitas Jr., J.A.⁴ Moore, W.J.⁵ Shanabrook, B.V.⁶ Wickenden, A.E.⁷ Koleske, D.D.⁸ Henry, R.L.⁹ Bayerl, M.W.¹⁰ Brandt, M.S.¹¹ Obloh, H.¹² Kozodoy, P.¹³ DenBaars, S.P.¹⁴ Mishra, U.K.¹⁵ Nakamura, S.¹⁶ Haus, E.¹⁷ Speck, J.S.¹⁸ Van Nostrand, J.E.¹⁹ Sanchez, M.A.²⁰ more..

9
- 0031079388
- SSELA5 0038-1101 10.1016/S0038-1101(96)00164-5
- M. Kunzer, J. Baur, U. Kaufmann, J. Schneider, H. Amano, and I. Akasaki, Solid State Electron. SSELA5 0038-1101 41, 189 (1997). 10.1016/S0038-1101(96) 00164-5
- (1997) Solid State Electron. , vol.41 , pp. 189
- Kunzer, M.¹ Baur, J.² Kaufmann, U.³ Schneider, J.⁴ Amano, H.⁵ Akasaki, I.⁶

10
- 33645166792
- PHYBE3 0921-4526 10.1016/j.physb.2005.12.113
- B. Monemar, P.P. Paskov, F. Tuomisto, K. Saarinen, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and S. Kimura, Physica (Amsterdam) 376B-377B, 440 (2006). PHYBE3 0921-4526 10.1016/j.physb.2005.12.113
- (2006) Physica (Amsterdam) , vol.376-377 , pp. 440
- Monemar, B.¹ Paskov, P.P.² Tuomisto, F.³ Saarinen, K.⁴ Iwaya, M.⁵ Kamiyama, S.⁶ Amano, H.⁷ Akasaki, I.⁸ Kimura, S.⁹

11
- 3442896012
- Nature of the 2.8 eV photoluminescence band in Mg doped GaN
- DOI 10.1063/1.120983, PII S000369519801211X
- U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. Schlotter, Appl. Phys. Lett. 72, 1326 (1998). APPLAB 0003-6951 10.1063/1.120983 (Pubitemid 128671156)
- (1998) Applied Physics Letters , vol.72 , Issue.11 , pp. 1326-1328
- Kaufmann, U.¹ Kunzer, M.² Maier, M.³ Obloh, H.⁴ Ramakrishnan, A.⁵ Santic, B.⁶ Schlotter, P.⁷

12
- 0042113153
- PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
- W. Kohn and L.J. Sham, Phys. Rev. 140, A1133 (1965). PHRVAO 0031-899X 10.1103/PhysRev.140.A1133
- (1965) Phys. Rev. , vol.140 , pp. 1133
- Kohn, W.¹ Sham, L.J.²

13
- 0037799714
- JCPSA6 0021-9606 10.1063/1.1564060
- J. Heyd, G.E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 118, 8207 (2003). JCPSA6 0021-9606 10.1063/1.1564060
- (2003) J. Chem. Phys. , vol.118 , pp. 8207
- Heyd, J.¹ Scuseria, G.E.² Ernzerhof, M.³

14
- 25744460922
- PRBMDO 0163-1829 10.1103/PhysRevB.50.17953
- P.E. Blöchl, Phys. Rev. B PRBMDO 0163-1829 50, 17953 (1994). 10.1103/PhysRevB.50.17953
- (1994) Phys. Rev. B , vol.50 , pp. 17953
- Blöchl, P.E.¹

15
- 0011236321
- PRBMDO 0163-1829 10.1103/PhysRevB.59.1758
- G. Kresse and D. Joubert, Phys. Rev. B PRBMDO 0163-1829 59, 1758 (1999). 10.1103/PhysRevB.59.1758
- (1999) Phys. Rev. B , vol.59 , pp. 1758
- Kresse, G.¹ Joubert, D.²

16
- 2442537377
- PRBMDO 0163-1829 10.1103/PhysRevB.54.11169
- G. Kresse and J. Furthmüller, Phys. Rev. B PRBMDO 0163-1829 54, 11169 (1996). 10.1103/PhysRevB.54.11169
- (1996) Phys. Rev. B , vol.54 , pp. 11169
- Kresse, G.¹ Furthmüller, J.²

17
- 0003685375
- (Springer, Berlin, 2nd ed.
- Semiconductors-Basic Data, edited by O. Madelung (Springer, Berlin, 1996), 2nd ed.
- (1996) Semiconductors-Basic Data
- Madelung, O.¹

18
- 77958090133
- APPLAB 0003-6951 10.1063/1.3492841
- J.L. Lyons, A. Janotti, and C.G. Van de Walle, Appl. Phys. Lett. 97, 152108 (2010). APPLAB 0003-6951 10.1063/1.3492841
- (2010) Appl. Phys. Lett. , vol.97 , pp. 152108
- Lyons, J.L.¹ Janotti, A.² Walle De Van, C.G.³

19
- 2342456342
- JAPIAU 0021-8979 10.1063/1.1682673
- C.G. Van de Walle and J. Neugebauer, J. Appl. Phys. 95, 3851 (2004). JAPIAU 0021-8979 10.1063/1.1682673
- (2004) J. Appl. Phys. , vol.95 , pp. 3851
- Walle De Van, C.G.¹ Neugebauer, J.²

20
- 84859840682
- See Supplemental Material at
- See Supplemental Material at http://link.aps.org/supplemental/10.1103/ PhysRevLett.108.156403 for more details on charge-state corrections.

21
- 0032620905
- JAPIAU 0021-8979 10.1063/1.371242
- M. Leroux, N. Grandjean, B. Beaumont, G. Nataf, F. Semond, J. Massies, and P. Gibart, J. Appl. Phys. 86, 3721 (1999). JAPIAU 0021-8979 10.1063/1.371242
- (1999) J. Appl. Phys. , vol.86 , pp. 3721
- Leroux, M.¹ Grandjean, N.² Beaumont, B.³ Nataf, G.⁴ Semond, F.⁵ Massies, J.⁶ Gibart, P.⁷

22
- 0000782597
- PRBMDO 0163-1829 10.1103/PhysRevB.59.13176
- M.A. Reshchikov, G. -C. Yi, and B.W. Wessels, Phys. Rev. B PRBMDO 0163-1829 59, 13176 (1999). 10.1103/PhysRevB.59.13176
- (1999) Phys. Rev. B , vol.59 , pp. 13176
- Reshchikov, M.A.¹ Yi, G.-C.² Wessels, B.W.³

23
- 3442884604
- PRLTAO 0031-9007 10.1103/PhysRevLett.75.4452
- J. Neugebauer and C.G. Van de Walle, Phys. Rev. Lett. 75, 4452 (1995). PRLTAO 0031-9007 10.1103/PhysRevLett.75.4452
- (1995) Phys. Rev. Lett. , vol.75 , pp. 4452
- Neugebauer, J.¹ Walle De Van, C.G.²

24
- 7544251489
- PRBMDO 0163-1829 10.1103/PhysRevB.68.075206
- S. Limpijumnong, J.E. Northrup, and C.G. Van de Walle, Phys. Rev. B PRBMDO 0163-1829 68, 075206 (2003). 10.1103/PhysRevB.68.075206
- (2003) Phys. Rev. B , vol.68 , pp. 075206
- Limpijumnong, S.¹ Northrup, J.E.² Walle De Van, C.G.³

25
- 0016105092
- JLUMA8 0022-2313 10.1016/0022-2313(74)90049-0
- A.T. Vink, R.L.A. Van der Heijden, and A.C. Van Amstel, J. Lumin. 9, 180 (1974). JLUMA8 0022-2313 10.1016/0022-2313(74)90049-0
- (1974) J. Lumin. , vol.9 , pp. 180
- Vink, A.T.¹ Heijden Der Van, A.R.L.² Van Amstel, A.C.³

26
- 33750034152
- Correlation between optical and electrical properties of Mg-doped AlN epilayers
- DOI 10.1063/1.2362582
- M.L. Nakarmi, N. Nepal, C. Ugolini, T.M. Altahtamouni, J.Y. Lin, and H.X. Jiang, Appl. Phys. Lett. 89, 152120 (2006). APPLAB 0003-6951 10.1063/1.2362582 (Pubitemid 44570568)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 152120
- Nakarmi, M.L.¹ Nepal, N.² Ugolini, C.³ Altahtamouni, T.M.⁴ Lin, J.Y.⁵ Jiang, H.X.⁶

27
- 0012207315
- 1-xN
- DOI 10.1063/1.120803, PII S0003695198035049
- C. Stampfl and C.G. Van de Walle, Appl. Phys. Lett. 72, 459 (1998). APPLAB 0003-6951 10.1063/1.120803 (Pubitemid 128672344)
- (1998) Applied Physics Letters , vol.72 , Issue.4 , pp. 459-461
- Stampfl, C.¹ Van De Walle, C.G.²

28
- 77952985638
- APPLAB 0003-6951 10.1063/1.3429086
- Á. Szabó, N.T. Son, E. Janzén, and A. Gali, Appl. Phys. Lett. 96, 192110 (2010). APPLAB 0003-6951 10.1063/1.3429086
- (2010) Appl. Phys. Lett. , vol.96 , pp. 192110
- Szabó, Á.¹ Son, N.T.² Janzén, E.³ Gali, A.⁴

29
- 62149144692
- APPLAB 0003-6951 10.1063/1.3094754
- M.L. Nakarmi, N. Nepal, J.Y. Lin, and H.X. Jiang, Appl. Phys. Lett. 94, 091903 (2009). APPLAB 0003-6951 10.1063/1.3094754
- (2009) Appl. Phys. Lett. , vol.94 , pp. 091903
- Nakarmi, M.L.¹ Nepal, N.² Lin, J.Y.³ Jiang, H.X.⁴

30
- 33750710129
- Buried p -type layers in Mg-doped InN
- DOI 10.1063/1.2378489
- P.A. Anderson, C.H. Swartz, D. Carder, R.J. Reeves, S.M. Durbin, S. Chandril, and T.H. Myers, Appl. Phys. Lett. 89, 184104 (2006). APPLAB 0003-6951 10.1063/1.2378489 (Pubitemid 44705788)
- (2006) Applied Physics Letters , vol.89 , Issue.18 , pp. 184104
- Anderson, P.A.¹ Swartz, C.H.² Carder, D.³ Reeves, R.J.⁴ Durbin, S.M.⁵ Chandril, S.⁶ Myers, T.H.⁷

31
- 77953623658
- JAPIAU 0021-8979 10.1063/1.3427564
- N. Miller, J. Appl. Phys. JAPIAU 0021-8979 107, 113712 (2010). 10.1063/1.3427564
- (2010) J. Appl. Phys. , vol.107 , pp. 113712
- Miller, N.¹

32
- 79952089590
- JCPSA6 0021-9606 10.1063/1.3548872
- P.G. Moses, M. Miao, Q. Yan, and C.G. Van de Walle, J. Chem. Phys. 134, 084703 (2011). JCPSA6 0021-9606 10.1063/1.3548872
- (2011) J. Chem. Phys. , vol.134 , pp. 084703
- Moses, P.G.¹ Miao, M.² Yan, Q.³ Walle De Van, C.G.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.